Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Lieh Hsi Lo"'
Publikováno v:
Sensors and Actuators B: Chemical. 94:53-64
To eliminate the need of a separate reference electrode and facilitate the use of ion-sensitive field-effect transistor (ISFET), an all-solid-state reference electrode integrated with ISFET in one chip has been developed. A novel agarose-stabilized K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2340602053c79f28dcf68552d8f9e1f
https://doi.org/10.1016/s0925-4005(03)00326-5
https://doi.org/10.1016/s0925-4005(03)00326-5
Publikováno v:
Journal of the Chinese Institute of Engineers. 25:327-334
To eliminate the need for a separate reference electrode and facilitate the use of an ion‐sensitive field‐effect transistor (ISFET) in a measurement system, a planar Ti/Pd/Ag/AgCl quasi reference electrode integrated with ISFET in one chip has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bb41c3cf9bafbac4efc4b84c2bd6b0b
https://doi.org/10.1080/02533839.2002.9670707
https://doi.org/10.1080/02533839.2002.9670707
Autor:
Lieh-hsi Lo, 羅烈熹
93
A monolithic design and fabrication process is proposed and realized for the thermal buckling micro valve and the built-in flow channel mass flow sensor modules in the thesis. The manufacturing procedure for the mass flow sensing and control
A monolithic design and fabrication process is proposed and realized for the thermal buckling micro valve and the built-in flow channel mass flow sensor modules in the thesis. The manufacturing procedure for the mass flow sensing and control
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/12213065700938426611
Publikováno v:
Proceedings of IEEE Sensors.
In this study, we demonstrate a highly sensitive polyimide capacitive humidity sensor achieved by reactive ion etching microstructures in polyimide film and novel electrode designs. For sensors of 3 /spl mu/m polyimide film, the sensitivity is improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d114a83fdce06e7329fe3d8a9c438d7
https://doi.org/10.1109/icsens.2002.1037147
https://doi.org/10.1109/icsens.2002.1037147
Publikováno v:
Proceedings of IEEE Sensors (9780780374546); 2002, p511-511, 1p