Výsledky vyhledávání

Report

Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

Autor: Higginbotham, A. P., Larsen, T. W., Yao, J., Yan, H., Lieber, C. M., Marcus, C. M., Kuemmeth, F.

Publikováno v: Nano Letters 14, 3582 (2014)

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds corresponding mea

Externí odkaz: http://arxiv.org/abs/1403.2093

Zobrazit plný text záznamu

Report

Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

Autor: Higginbotham, A. P., Kuemmeth, F., Larsen, T. W., Fitzpatrick, M., Yao, J., Yan, H., Lieber, C. M., Marcus, C. M.

Publikováno v: Phys. Rev. Lett. 112, 216806 (2014)

The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks,

Externí odkaz: http://arxiv.org/abs/1401.2948

Zobrazit plný text záznamu

Report

Spin states of the first four holes in a silicon nanowire quantum dot

Autor: Zwanenburg, F. A., van Rijmenam, C. E. W. M., Fang, Y., Lieber, C. M., Kouwenhoven, L. P.

Publikováno v: Nano Lett. 9, 1071 (2009)

We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular

Externí odkaz: http://arxiv.org/abs/0811.2914

Zobrazit plný text záznamu

Report

Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires

Autor: Roddaro, S., Fuhrer, A., Fasth, C., Samuelson, L., Xiang, J., Lieber, C. M.

We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate el

Externí odkaz: http://arxiv.org/abs/0706.2883

Zobrazit plný text záznamu

Report

Plastic Deformations in Mechanically Strained Single-Walled Carbon Nanotubes

Autor: Bozovic, D., Bockrath, M., Hafner, J. H., Lieber, C. M., Park, H., Tinkham, M.

AFM manipulation was used to controllably stretch individual metallic single-walled carbon nanotubes (SWNTs). We have found that SWNTs can sustain elongations as great as 30% without breaking. Scanned gate microscopy and transport measurements were u

Externí odkaz: http://arxiv.org/abs/cond-mat/0210420

Zobrazit plný text záznamu