Výsledky vyhledávání - "Lie, D. Y. C"

A Review of 5G Power Amplifier Design at cm-Wave and mm-Wave Frequencies

Autor: Lie, D. Y. C., Mayeda, J. C., Li, Y., Lopez, J.

Publikováno v: Wireless Communications and Mobile Computing.

The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed using millimeter-wave (mm-Wave) spectrum with multiple-input multiple-output (M

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=hindawi_publ::3da52a810eb9b9f22155de4202a49533

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Akademický článek

"RF-SoC": Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications.

Autor: Lie, D. Y. C.¹ donald.lie@ttu.edu

Publikováno v: International Journal of Microwave Science & Technology. 2010, Vol. 2010, Special section p1-7. 7p. 1 Black and White Photograph, 2 Diagrams.

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Damage and strain in epitaxial GexSi1-x films irradiated with Si.

Autor: Lie, D. Y. C., Vantomme, A., Eisen, F., Vreeland, T., Nicolet, M.-A., Carns, T. K., Arbet-Engels, V., Wang, K. L.

Publikováno v: Journal of Applied Physics; 11/15/1993, Vol. 74 Issue 10, p6039, 7p, 1 Chart, 9 Graphs

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SiGeC alloy layer formation by high-dose C[sup +] implantations into pseudomorphic metastable Ge[sub 0.08]Si[sub 0.92] on Si(100).

Autor: Im, S., Song, J. H., Lie, D. Y. C., Eisen, F., Atwater, H., Nicolet, M.-A.

Publikováno v: Journal of Applied Physics; 2/15/1997, Vol. 81 Issue 4, p1700, 4p

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Short and long annealing of high-dose arsenic-implanted pseudomorphic GexSi1-x on Si(100).

Autor: Lie, D. Y. C., Im, S., Nicolet, M.-A., Theodore, N. D.

Publikováno v: Journal of Applied Physics; 6/1/1996, Vol. 79 Issue 11, p8341, 8p, 1 Black and White Photograph, 3 Graphs

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Solid-phase epitaxial regrowth and dopant activation of P-implanted metastable pseudomorphic Ge0.12Si0.88 on Si(100).

Autor: Lie, D. Y. C., Theodore, N. D., Song, J. H., Nicolet, M.-A.

Publikováno v: Journal of Applied Physics; 5/15/1995, Vol. 77 Issue 10, p5160, 7p, 4 Graphs

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Akademický článek

Dependence of damage and strain on the temperature of Si irradiation in epitaxial Ge0.10Si0.90 films on Si(100).

Autor: Lie, D. Y. C., Song, J. H., Vantomme, A., Eisen, F., Nicolet, M.-A., Theodore, N. D., Carns, T. K., Wang, K. L.

Publikováno v: Journal of Applied Physics; 3/15/1995, Vol. 77 Issue 6, p2329, 10p, 1 Diagram, 12 Graphs

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A Wireless Gait Analysis Sensor for Real-Time Robust Fall Detection Using an Artificial Neural Network

Autor: Lie, Donald, Nukala, B. T., Shibuya, N., Rodriguez, A. I., Tsay, J., Nguyen, T. Q., Zupancic, S., Lie, D. Y. C.

This paper describes our custom-designed wireless gait analysis sensor (WGAS) system developed and tested for real-time fall detection. The WGAS is capable of differentiating falls vs. Activities of Daily Living (ADL) and the Dynamic Gait Index (DGI)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2659::71de26002ec5d2ff16df8a9c4bfcade1
https://zenodo.org/record/1269265