Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Lidia Łukasiak"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and
Externí odkaz:
https://doaj.org/article/ae3080019a444102847a41b170053890
Autor:
Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It
Externí odkaz:
https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a n
Externí odkaz:
https://doaj.org/article/86e7e9b1960b4615a7c81b301e958170
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to ob
Externí odkaz:
https://doaj.org/article/adbaf07b52714d048cad257cc7096153
Autor:
Lidia Łukasiak, Andrzej Jakubowski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2023)
The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) an
Externí odkaz:
https://doaj.org/article/92ebb91193684189a5a445067bcf5eac
Autor:
Arkadiusz Malinowski, Daniel Tomaszewski, Lidia Łukasiak, Andrzej Jakubowski, Makoto Sekine, Masaru Hori, Michael L. Korwin-Pawlowski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, compos
Externí odkaz:
https://doaj.org/article/a64ad760157b48659e470b85e4c94391
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2010)
Preface
Externí odkaz:
https://doaj.org/article/6fc2424dee844ad58e3e9513ff9a5846
Autor:
Andrzej Jakubowski, Lidia Łukasiak
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2009)
Preface
Externí odkaz:
https://doaj.org/article/3133ea5e0741472199f57c4954ac1a96
Autor:
Andrzej Jakubowski, Lidia Łukasiak
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2007)
Preface
Externí odkaz:
https://doaj.org/article/01021ed123f147d1b7145f9594b92b8a
Autor:
Andrzej Jakubowski, Lidia Łukasiak
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
Preface
Externí odkaz:
https://doaj.org/article/fc12ebb6040c43e1afee1d9b880ba463