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Autor:
Maryam Al Huwayz, R. M. S. Kawabata, Mohamed Henini, Mauricio P. Pires, L. D. Pinto, R. Jakomin, Daniel Neves Micha, Lida Janeth CollazosPaz, Patricia L. Souza
Electrically active defects present in three InAs/GaAs quantum dots (QDs) intermediate band solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices’ structures are almost identical, differing only in the growth tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8319d59a1ee547885635fbf798996a1
