Impact of oxygen related extended defects on silicon diode characteristics.

Autor: Vanhellemont, J., Simoen, E., Kaniava, A., Libezny, M., Claeys, C.

Publikováno v: Journal of Applied Physics; 6/1/1995, Vol. 77 Issue 11, p5669, 8p

Morphologies and growth modes of FeSi and beta-FeSi2 layers prepared by rapid thermal annealing

Autor: Amesz, PH, Jorgensen, LV, Libezny, M, Poortmans, J, Nijs, J, vanVeen, A, Schut, H, deHosson, JTM, Tung, RT, Maex, K, Pellegrini, PW, Allen, LH

Publikováno v: SILICIDE THIN FILMS-FABRICATION, PROPERTIES, AND APPLICATIONS, 373-378
STARTPAGE=373;ENDPAGE=378;TITLE=SILICIDE THIN FILMS-FABRICATION, PROPERTIES, AND APPLICATIONS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::3922a2058a83e53f6d72c57a2ab9f08f
https://research.rug.nl/en/publications/1327eed3-c48a-49bd-9a7d-793bd9168848

Solar cell preparation in thin silicon membranes.

Autor: Libezny, M., Poortmans, J., Caymax, M., Beaucame, G., Laureys, W., Nijs, J.

Publikováno v: Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997; 1997, p271-274, 4p

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Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments

Autor: Vanhellemont, Jan, Kissinger, G., Clauws, Paul, Kaniava, A., Libezny, M., Gaubas, Eugenijus, Simoen, Eddy, Richter, Hans, Claeys, C.

Publikováno v: Diffusion and Defect Data Part B: Solid State Phenomena; July 1995, Vol. 47 Issue: 1 p229-236, 8p