Zobrazeno 1 - 10
of 2 006
pro vyhledávání: '"Liao Zhi"'
Autor:
Li, Dong, Liu, Xing-Yu, Ye, Xing-Guo, Pan, Zhen-Cun, Xu, Wen-Zheng, Zhu, Peng-Fei, Wang, An-Qi, Watanabe, Kenji, Taniguchi, Takashi, Liao, Zhi-Min
Publikováno v:
Physical Review B 110, L100409 (2024)
We report the synergy between orbital and spin-orbit torques in WTe2/Fe3GeTe2 heterostructures characterized by a Berry curvature dipole. By applying a current along the a axis in WTe2, we detect an out-of-plane magnetization in the system, which we
Externí odkaz:
http://arxiv.org/abs/2412.02491
Publikováno v:
Physical Review B 110, 035423 (2024)
Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-efficiently converting charge currents into out of plane orbit- or spi
Externí odkaz:
http://arxiv.org/abs/2412.02488
Autor:
Lou, Han-Xin, Ye, Xing-Guo, Liao, Xin, Zhao, Tong-Yang, Wang, An-Qi, Yu, Da-Peng, Liao, Zhi-Min
Publikováno v:
Applied Physics Letters 125, 132601 (2024)
We investigate the resistive anisotropy in CsV3Sb5 thin films within the charge density wave phase. Using a device structure with twelve electrodes symmetrically distributed in a circular shape, we measure the resistivity anisotropy by varying the cu
Externí odkaz:
http://arxiv.org/abs/2412.02469
Publikováno v:
Physical Review Applied 22, 054078 (2024)
Nonlinear transport plays a vital role in probing the quantum geometry of Bloch electrons, valley chirality, and carrier scattering mechanisms. The nonlinear Hall effect, characterized by a nonlinear scaling of Hall voltage with longitudinal current,
Externí odkaz:
http://arxiv.org/abs/2412.02939
Autor:
Wang, An-Qi, Li, Dong, Zhao, Tong-Yang, Liu, Xing-Yu, Zhang, Jiantian, Liao, Xin, Yin, Qing, Pan, Zhen-Cun, Yu, Peng, Liao, Zhi-Min
Publikováno v:
Physical Review B 110, 155434 (2024)
We report on the observation of the linear anomalous Hall effect (AHE) in the nonmagnetic Weyl semimetal TaIrTe4. This is achieved by applying a direct current Idc and an alternating current Iac (Iac<
Externí odkaz:
http://arxiv.org/abs/2412.02937
Publikováno v:
Physical Review B 110, L201407 (2024)
In materials with spin-momentum locked spin textures, such as Rashba states and topological surface states, the current-induced shift of the Fermi contour in the k space leads to spin polarization, known as the Edelstein effect, which depends linearl
Externí odkaz:
http://arxiv.org/abs/2412.02938
Autor:
LIAO Zhi-wen, CHEN Jun-fei, YANG Chun-sheng, ZHANG Zhi, CHEN Li, XIAO Li-zhi, CHEN Fang, LIU Chao-yang
Publikováno v:
Chinese Journal of Magnetic Resonance, Vol 37, Iss 03, Pp 273-282 (2020)
Based on the principle of birdcage coil and the decoupling theory of array coil, a design scheme for dual-nuclear magnetic resonance imaging (MRI) coil is proposed. A LC parallel trap is used to improve the adaptability of the inductive decoupling sc
Externí odkaz:
https://doaj.org/article/77b44291477f496bae39f4a71d87257a
Autor:
HUANG Guang-wen, PAN Jia-yong, ZHANG Zhan-feng, HUANG Guang-nan, ZHANG Tao, LIAO Zhi-quan, DU Hou-fa
Publikováno v:
Yankuang ceshi, Vol 36, Iss 2, Pp 196-207 (2017)
Quantitative analysis of sandstone clastic composition can provide important basis for provenance and sedimentary basin investigation. Based on the observation and description of sandstone macroscopic characteristics in the field, the ore-bearing san
Externí odkaz:
https://doaj.org/article/323f76ec52b540bfa3b51d3a416c54e1
Publikováno v:
Phys. Rev. Lett. 131, 186302 (2023)
We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd3As2 nanoplates through measurements of the third-order nonlinear Hall effect. Under an applied electric field, the Berry curvature exhibits an asymmetric distribut
Externí odkaz:
http://arxiv.org/abs/2312.01263
Autor:
Pan, Zhen-Cun, Li, Dong, Ye, Xing-Guo, Chen, Zheng, Chen, Zhao-Hui, Wang, An-Qi, Tian, Mingliang, Yao, Guangjie, Liu, Kaihui, Liao, Zhi-Min
Publikováno v:
Science Bulletin 68, 2743 (2023)
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der Waals heteros
Externí odkaz:
http://arxiv.org/abs/2312.01269