Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Liao, Yongbo"'
Autor:
Guo, Dongen, Lin, Yuyao, Ji, Kangyi, Han, Linbo, Liao, Yongbo, Shen, Zhen, Feng, Jiangfan, Tang, Man
Publikováno v:
In Biomedical Signal Processing and Control October 2024 96 Part B
Publikováno v:
In Micro and Nanostructures December 2024 196
Autor:
Liao, Yongbo.
Thesis (Ph. D.)--University of Virginia, 2000.
Includes bibliographical references (leaves 174-192). Also available online through Digital Dissertations.
Includes bibliographical references (leaves 174-192). Also available online through Digital Dissertations.
Externí odkaz:
http://wwwlib.umi.com/dissertations/fullcit/9975512
Publikováno v:
In Microelectronics Reliability July 2023 146
Publikováno v:
In Infrared Physics and Technology November 2018 94:23-31
Publikováno v:
In Microelectronics Reliability June 2018 85:118-121
Publikováno v:
In Microprocessors and Microsystems October 2016 46 Part B:175-183
Publikováno v:
2021 IEEE 4th International Conference on Electronics Technology (ICET).
In this paper, a Hetero-junction Vertical Trench MOSFET (HVTFET) is proposed. The HVTFET has a multilayer structure. Compared with FinFETs and GAAs, the HVTFET provides a new method to effectively overcome the DIBL effect of the small-size IC. The ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a5060d7d2bd382d874ad3b12e52dc0
https://doi.org/10.1109/icet51757.2021.9451090
https://doi.org/10.1109/icet51757.2021.9451090
Publikováno v:
Microelectronics Reliability. 85:118-121
In this paper, graphene field effect transistors with amorphous silicon gate dielectric have been fabricated. A reverse hysteresis effect in these transistors is observed at room temperature. This property is different from that of the graphene field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb8527147d4c6308e391fb1e8e03d100
https://doi.org/10.1016/j.microrel.2018.04.012
https://doi.org/10.1016/j.microrel.2018.04.012
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