Zobrazeno 1 - 10
of 112
pro vyhledávání: '"Lianshan Wang"'
Autor:
Yanlian Yang, Yao Liu, Lianshan Wang, Shuping Zhang, Haixia Lu, Yi Peng, Wenwang Wei, Jia Yang, Zhe Chuan Feng, Lingyu Wan, Benjamin Klein, Ian T. Ferguson, Wenhong Sun
Publikováno v:
Materials, Vol 16, Iss 23, p 7442 (2023)
The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the Al
Externí odkaz:
https://doaj.org/article/aa256e7fc1164ea4aa8a3e6ef18cb66c
Autor:
Shuping Zhang, Hong Yang, Lianshan Wang, Hongjuan Cheng, Haixia Lu, Yanlian Yang, Lingyu Wan, Gu Xu, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson, Wenhong Sun
Publikováno v:
Materials, Vol 16, Iss 5, p 1925 (2023)
Bulk aluminum nitride (AlN) crystals with different polarities were grown by physical vapor transport (PVT). The structural, surface, and optical properties of m-plane and c-plane AlN crystals were comparatively studied by using high-resolution X-ray
Externí odkaz:
https://doaj.org/article/408aad5be8e044d9bb08a4980547cf93
Autor:
Wenlong Li, Lianshan Wang, Ruohao Chai, Ling Wen, Zhen Wang, Wangguo Guo, Huanhua Wang, Shaoyan Yang
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 3007 (2022)
Semipolar (112¯2) InGaN/GaN superlattice templates with different periodical InGaN layer thicknesses were grown on m-plane sapphire substrates using metal-organic chemical vapor deposition (MOCVD). The strain in the superlattice layers, the relaxati
Externí odkaz:
https://doaj.org/article/885d4a81f16d48f98b6dfb7d5fddfc34
Autor:
Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with in
Externí odkaz:
https://doaj.org/article/422e0d6c1666484292a392651170d402
Publikováno v:
Nanomaterials, Vol 6, Iss 11, p 195 (2016)
Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates
Externí odkaz:
https://doaj.org/article/15f07bbab94442828b36a09331d89fea
Autor:
Huidan Niu, Weizhen Yao, Shaoyan Yang, Xianglin Liu, Qingqing Chen, Lianshan Wang, Huanhua Wang, Zhanguo Wang
Publikováno v:
CrystEngComm. 25:1263-1269
A horizontal warm-wall MOCVD reactor with a Mo reflector screen stabilizes the temperature field and facilitates TMG decomposition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f16be3ff521d13a742a6bf62040efb5a
https://doi.org/10.1039/d2ce01678h
https://doi.org/10.1039/d2ce01678h
Autor:
Zhiqiang Chen, Shaodong Deng, Min Li, Mengwei Su, Xinglin Zhu, Yukun Wang, Ziqian Chen, Jianyu Deng, Lianshan Wang, Wenhong Sun
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:17395-17403
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ac59d10409f46f4ae3a2416ddceea6a
https://doi.org/10.1007/s10854-022-08621-y
https://doi.org/10.1007/s10854-022-08621-y
Autor:
Wenlong Li, Lianshan Wang, Ruohao Chai, Ling Wen, Haixia Lu, Huanhua Wang, Shaoyan Yang, Wenhong Sun
Publikováno v:
Current Applied Physics. 39:38-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a574086bbf0d35a8a453e1070cdeba8
https://doi.org/10.1016/j.cap.2022.03.020
https://doi.org/10.1016/j.cap.2022.03.020
Autor:
Hui-dan Niu, Zhanguo Wang, Xianglin Liu, Hui-jie Li, Hongyuan Wei, Lianshan Wang, Weizhen Yao, Qing-qing Chen, Shaoyan Yang, Susu Kong
Publikováno v:
Chinese Journal of Luminescence. 42:1739-1747
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c062f06e980c3dd8131f102365710c3
https://doi.org/10.37188/cjl.20210287
https://doi.org/10.37188/cjl.20210287
Autor:
Shaoyan Yang, Yulin Meng, Zhanguo Wang, Lianshan Wang, Weizhen Yao, Hui-dan Niu, Xianglin Liu
Publikováno v:
CrystEngComm. 23:2360-2366
Long visible light-emitting diodes (LEDs) have been proven promising in solid-state lighting covering all visible wavelengths. However, the efficiency of LEDs with high indium content in InGaN multiple quantum wells (MQWs) substantially decreases in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f87fe398c342ccd0870f3023e03a6a
https://doi.org/10.1039/d0ce01769h
https://doi.org/10.1039/d0ce01769h