Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Lianjun Wen"'
Autor:
Xupeng Zhao, Hongli Sun, Rongkun Han, Hongrui Qin, Lianjun Wen, Hailong Wang, Dahai Wei, Jianhua Zhao
Publikováno v:
APL Materials, Vol 12, Iss 4, Pp 041103-041103-8 (2024)
The indirect interlayer exchange coupling (IEC) between two magnetic layers holds significant importance in the field of spintronics and has been widely used in the construction of synthetic antiferromagnets. Recently, the interlayer Dzyaloshinskii
Externí odkaz:
https://doaj.org/article/fa6def5f177342d2ab59f57fc9071b80
Autor:
Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang
Publikováno v:
Physical Review Research, Vol 4, Iss 3, p 033235 (2022)
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband
Externí odkaz:
https://doaj.org/article/7573eb406908457c81d41b7a052ede0b
Publikováno v:
The Journal of Physical Chemistry Letters. 13:598-605
Autor:
Zhaoyu Wang, Huading Song, Dong Pan, Zitong Zhang, Wentao Miao, Ruidong Li, Zhan Cao, Gu Zhang, Lei Liu, Lianjun Wen, Ran Zhuo, Dong E. Liu, Ke He, Runan Shang, Jianhua Zhao, Hao Zhang
Publikováno v:
Physical review letters. 129(16)
Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at $2e^2/h$ at zero temperature. Experimentally, a zero-bias peak (ZBP) is expected and its height should remain robust against relevant parameter tuning,
Autor:
Zhichuan Wang, Shan Zhang, Dong Pan, Gu Zhang, Zezhou Xia, Zonglin Li, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Yongqing Li, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang
We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::238bb471027443ea70753a004b50cc6f
Publikováno v:
Nanotechnology. 34:225701
InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum devices, and all these applications require controllable growth of the InAs nanowires. However, the growth direction of
Autor:
Shan Zhang, Zhichuan Wang, Dong Pan, Hangzhe Li, Shuai Lu, Zonglin Li, Gu Zhang, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Runan Shang, Dong E. Liu, Jianhua Zhao, Hao Zhang
Publikováno v:
Physical review letters. 128(7)
Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes, manifested as zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not sufficient evidence due to the ubiquitous presence of Andreev bound s
Publikováno v:
Nanotechnology. 31(46)
InAs
Autor:
Runze Chen, Chaojun Gao, Erjun Liang, Zichen Wang, Lianjun Wen, Juan Guo, Mingju Chao, Cheng Dong, Kun Bu, Xiaoyu Hao, Lihong Yang
Publikováno v:
Journal of Low Temperature Physics. 188:1-10
Potassium tungsten bronzes $$\hbox {K}_{x}\hbox {WO}_{3}$$ ( $$x=0.20$$ and 0.22) with the coexistence of charge density wave (CDW) and superconductivity (SC) were prepared from $$\hbox {K}_{2}\hbox {WO}_{4},\, \hbox {WO}_{3}$$ and W powders using a
Publikováno v:
Nanotechnology. 31:465602
InAs1-x Sb x nanowires show promise for use in nanoelectronics, infrared optoelectronics and topological quantum computation. Such applications require a high degree of growth control over the growth direction, crystal quality and morphology of the n