Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Liang-Yueh Ou Yang"'
Autor:
Thomas P Moffat, Yihua Liu, Dincer Gokcen, Liang Yueh Ou Yang, Sun Mi Hwang, Carlos M Hangarter, Stephen Ambrozik, Nikolay Dimitrov, Ugo Bertocci
Publikováno v:
ECS Meeting Abstracts. :1108-1108
The interplay between adsorption, underpotential deposition and excess bond enthalpy in the deposition of alloys and intermetallic will be discussed based on selections from recent work. Examples of limiting behavior will be presented that range from
Autor:
Thomas P Moffat, Trevor Michael Braun, David Raciti, Guo Kun Liu, Liang Yueh Ou Yang, William Osborn, Lee J. Richter, Angela Hight Walker, Daniel Josell
Publikováno v:
ECS Meeting Abstracts. :1188-1188
The manufacturing of semiconductor devices involves electrodeposition of copper interconnects from additive containing electrolytes. The process depends on additives that affect the local deposition rate to yield void-free superconformal or bottom–
Autor:
Sun-Mi Hwang, Thomas P. Moffat, Carlos M. Hangarter, Ugo Bertocci, Nikolay Dimitrov, J Mallett, Dincer Gokcen, Y. Liu, Stephen Ambrozik, Liang Yueh Ou Yang
Publikováno v:
ECS Meeting Abstracts. :1218-1218
The interplay between ionic adsorption, underpotential deposition and excess bond enthalpy in the deposition of materials will be discussed based on selections from recent work. Examples of limiting behavior will be presented that range from the depo
Autor:
Shouzhong Zou, Guokun Liu, Trevor M. Braun, Daniel Josell, Liang Yueh Ou Yang, Daniel Wheeler, Lee J. Richter, Thomas P. Moffat
Publikováno v:
ECS Meeting Abstracts. :1154-1154
State-of-the-art manufacturing of semiconductor devices involves electrodeposition of copper interconnects The process depends on additives that affect the local deposition rate to yield void-free superconformal, or bottom–up filling of trenches an
Autor:
Thomas P. Moffat, Guokun Liu, Shouzhong Zou, Liang-Yueh Ou Yang, Trevor Braun, Marlon Walker, Daniel Wheeler, Lee Richter, Daniel Josell
Publikováno v:
ECS Meeting Abstracts. :1123-1123
State of the art manufacturing of semiconductor devices involves electrodeposition of copper for device wiring and chip stacking. The success of the electroplating process depends on electrolyte additives that affect the local deposition rate to yiel
Autor:
Thomas P. Moffat, Guokun Liu, Shouzhong Zou, Liang Yueh Ou Yang, Trevor Braun, Marlon Walker, Daniel Wheeler, Lee Richter, Daniel Josell
Publikováno v:
ECS Meeting Abstracts. :1112-1112
State of the art manufacturing of semiconductor devices involves electrodeposition of copper for device wiring and chip stacking. The success of the electroplating process depends on electrolyte additives that affect the local deposition rate to yiel
Publikováno v:
ECS Meeting Abstracts. :1253-1253
State of the art manufacturing of semiconductor devices involves electrodeposition of copper for device wiring and chip stacking. The success of the electroplating process depends on electrolyte additives that affect the local deposition rate to yiel
Publikováno v:
Langmuir. 22:2105-2111
Substituted bis(phthalocyaninato) rare earth complexes ML 2 (M = Y and Ce; L = [Pc(OC 8 H 17 ) 8 ] 2 , where Pc = phthalocyaninato) were adsorbed onto single crystalline Au(111) electrodes from benzene saturated with either YL 2 or CeL 2 complex at r
Publikováno v:
Langmuir. 21:4964-4970
The adsorption of formaldehyde (HCHO) on Pt(111) and Pt(100) electrodes was examined by cyclic voltammetry (CV) and in situ scanning tunneling microscopy (STM) in 0.1 M HClO(4). The extent of HCHO adsorption at both Pt electrodes was evaluated by com
Publikováno v:
Langmuir. 20:4596-4603
In situ scanning tunneling microscopy (STM) combined with linear sweep voltammetry was used to examine spatial structures of sulfur adatoms (SA) and benzenethiol (BT) molecules adsorbed on an ordered Ru(0001) electrode in 0.1 M HClO4. The Ru(0001) su