Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Liang-Wei Ouyang"'
Publikováno v:
Applied Sciences, Vol 14, Iss 7, p 3080 (2024)
This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from
Externí odkaz:
https://doaj.org/article/14e3d99344cc40479a7c0f18a1faa146
