Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Liang Ji-Ben"'
Publikováno v:
Journal of Applied Physics; 12/1/2000, Vol. 88 Issue 11, p6429, 7p
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 8:164-169
In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55f5b310ef683fe8524d0a5eb509d37
https://doi.org/10.1016/s1386-9477(00)00134-x
https://doi.org/10.1016/s1386-9477(00)00134-x
Publikováno v:
Acta Physica Sinica. 49:1821
Fourier transformation (FT) method has been used in the theoretical lineshape analysis of the Franz-Keldysh Oscillation (FKO) in detail by numerical simulation. The FKO of a set of GaAs SIN+ samples was obtained in photoreflectanc e measurements.The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5580d4796f3749d0d0bc22a7fac5545
https://doi.org/10.7498/aps.49.1821
https://doi.org/10.7498/aps.49.1821
Autor:
Zhou, Wei, Xu, Bo, Xu, Huai-zhe, Jiang, Wei-hong, Liu, Feng-qi, Gong, Qian, Ding, Ding, Liang, Ji-ben, Wang, Zhan-guo, Zhu, Zuo-ming, Li, Guo-hua
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 1, p21-24, 4p
Publikováno v:
Acta Physica Sinica. 42:817
The deep levels of P-HEMT structure grown by MBE have been studied using DLTS technique. DLTS Spectra of samples show that high temperature electron traps, having larger capture cross sections and concentrations, are measured in n-AlGaAs layer of P-H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae8bcb31a6654fd836ecd77e71827d0f
https://doi.org/10.7498/aps.42.817
https://doi.org/10.7498/aps.42.817
Publikováno v:
Acta Physica Sinica. 40:1827
The electronic characteristics of GaAs grown on Si by molecular beam epitaxy(MBE) has been examined by studying the diode characteristics and deep level transient spectroscopy (DLTS) of Schottky barriers. l-V characteristics of samples show the exist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab3b80ce12af6f35f5ea10e5b7ded57
https://doi.org/10.7498/aps.40.1827
https://doi.org/10.7498/aps.40.1827
Autor:
Liang Ji-Ben, Lin Zhenjin, Han Zhi-Yong, Ruozhen wang, Zhao Mingshan, Jiang De-Sheng, Zhuang Wei-Hua
Publikováno v:
Chinese Physics Letters. 4:189-191
Photoreflectance of GaAs doping superlattices has been measured at 300K. The spectra exhibits features corresponding to spatially direct transitions due to quantized electron or hole states. We demonstrate the utility of the photoreflectance techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e48c8a7c1b809ef15cd9eb033eadbd
https://doi.org/10.1088/0256-307x/4/4/012
https://doi.org/10.1088/0256-307x/4/4/012
Publikováno v:
Journal of Crystal Growth; 19950501, Vol. 150 Issue: 0 p1270-1274, 5p
Autor:
Liu, Hui-Yun, Xu, Bo, Wei, Yong-Qiang, Ding, Ding, Qian, Jia-Jun, Han, Qin, Liang, Ji-Ben, Wang, Zhan-Guo
Publikováno v:
Applied Physics Letters; 10/29/2001, Vol. 79 Issue 18, p2868, 3p, 4 Graphs
Publikováno v:
Hong Kong University of Science and Technology
In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::824ceff56f6fc55fde53825ab95490b9
http://hdl.handle.net/1783.1/45818
http://hdl.handle.net/1783.1/45818
