Zobrazeno 1 - 10
of 597
pro vyhledávání: '"Lian-mao Peng"'
Autor:
Guanhua Long, Wanlin Jin, Fan Xia, Yuru Wang, Tianshun Bai, Xingxing Chen, Xuelei Liang, Lian-Mao Peng, Youfan Hu
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
High-speed flexible circuits are essential in flexible systems for real-time information analysis and wireless communication. Here, flexible circuits are reported with a 281 ps stage delay based on scaled carbon nanotube thin film transistors.
Externí odkaz:
https://doaj.org/article/3144f9b902ac4d6282fb4d3b4abd70a4
Autor:
Chenwei Fan, Xiaohan Cheng, Lin Xu, Maguang Zhu, Sujuan Ding, Chuanhong Jin, Yunong Xie, Lian‐Mao Peng, Zhiyong Zhang
Publikováno v:
InfoMat, Vol 5, Iss 7, Pp n/a-n/a (2023)
Abstract Carbon nanotube field‐effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low‐temperature fabrication process and require a low thermal budget to construct monolithic three‐dimensional (M3D) in
Externí odkaz:
https://doaj.org/article/2aec10621aeb4a9ba4cc87ec4ec5e935
Publikováno v:
Nano Research Energy, Vol 2, Iss 2, Pp e9120058-e9120058 (2023)
Due to its remarkable electrical and optical capabilities, optoelectronic devices based on the semiconducting single-walled carbon nanotube (s-SWCNT) have been studied extensively in the last two decades. First, s-SWCNT is a direct bandgap semiconduc
Externí odkaz:
https://doaj.org/article/1ca639fd966849f8a68bb24cd7c76a44
Autor:
Martin Hartmann, Sascha Hermann, Phil F. Marsh, Christopher Rutherglen, Dawei Wang, Li Ding, Lian-Mao Peng, Martin Claus, Michael Schroter
Publikováno v:
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 275-287 (2021)
RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for impr
Externí odkaz:
https://doaj.org/article/07bd314cb7944f07ad5e1d11e334a4dc
Autor:
Vincenzo Pecunia, S Ravi P Silva, Jamie D Phillips, Elisa Artegiani, Alessandro Romeo, Hongjae Shim, Jongsung Park, Jin Hyeok Kim, Jae Sung Yun, Gregory C Welch, Bryon W Larson, Myles Creran, Audrey Laventure, Kezia Sasitharan, Natalie Flores-Diaz, Marina Freitag, Jie Xu, Thomas M Brown, Benxuan Li, Yiwen Wang, Zhe Li, Bo Hou, Behrang H Hamadani, Emmanuel Defay, Veronika Kovacova, Sebastjan Glinsek, Sohini Kar-Narayan, Yang Bai, Da Bin Kim, Yong Soo Cho, Agnė Žukauskaitė, Stephan Barth, Feng Ru Fan, Wenzhuo Wu, Pedro Costa, Javier del Campo, Senentxu Lanceros-Mendez, Hamideh Khanbareh, Zhong Lin Wang, Xiong Pu, Caofeng Pan, Renyun Zhang, Jing Xu, Xun Zhao, Yihao Zhou, Guorui Chen, Trinny Tat, Il Woo Ock, Jun Chen, Sontyana Adonijah Graham, Jae Su Yu, Ling-Zhi Huang, Dan-Dan Li, Ming-Guo Ma, Jikui Luo, Feng Jiang, Pooi See Lee, Bhaskar Dudem, Venkateswaran Vivekananthan, Mercouri G Kanatzidis, Hongyao Xie, Xiao-Lei Shi, Zhi-Gang Chen, Alexander Riss, Michael Parzer, Fabian Garmroudi, Ernst Bauer, Duncan Zavanelli, Madison K Brod, Muath Al Malki, G Jeffrey Snyder, Kirill Kovnir, Susan M Kauzlarich, Ctirad Uher, Jinle Lan, Yuan-Hua Lin, Luis Fonseca, Alex Morata, Marisol Martin-Gonzalez, Giovanni Pennelli, David Berthebaud, Takao Mori, Robert J Quinn, Jan-Willem G Bos, Christophe Candolfi, Patrick Gougeon, Philippe Gall, Bertrand Lenoir, Deepak Venkateshvaran, Bernd Kaestner, Yunshan Zhao, Gang Zhang, Yoshiyuki Nonoguchi, Bob C Schroeder, Emiliano Bilotti, Akanksha K Menon, Jeffrey J Urban, Oliver Fenwick, Ceyla Asker, A Alec Talin, Thomas D Anthopoulos, Tommaso Losi, Fabrizio Viola, Mario Caironi, Dimitra G Georgiadou, Li Ding, Lian-Mao Peng, Zhenxing Wang, Muh-Dey Wei, Renato Negra, Max C Lemme, Mahmoud Wagih, Steve Beeby, Taofeeq Ibn-Mohammed, K B Mustapha, A P Joshi
Publikováno v:
JPhys Materials, Vol 6, Iss 4, p 042501 (2023)
Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial
Externí odkaz:
https://doaj.org/article/884d9a349be14f07b276e877a5fd1391
Autor:
Yu-Tao Li, Li Ding, Jun-Ze Li, Jun Kang, De-Hui Li, Li Ren, Zhen-Yi Ju, Meng-Xing Sun, Jia-Qi Ma, Ye Tian, Guang-Yang Gou, Dan Xie, He Tian, Yi Yang, Lin-Wang Wang, Lian-Mao Peng, Tian-Ling Ren
Publikováno v:
ACS Central Science, Vol 5, Iss 11, Pp 1857-1865 (2019)
Externí odkaz:
https://doaj.org/article/28f3660944ed4b22a84ec1fb787dafa0
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Single-material monolithic optoelectronic integrated circuits via CMOS compatible low-temperature approaches are crucial to the continued development of post-Moore electronics. Liuet al., report carbon nanotube based electrically driven 3D monolithic
Externí odkaz:
https://doaj.org/article/893a6a693df04031925ecaafd84d642d
Publikováno v:
AIP Advances, Vol 7, Iss 10, Pp 105111-105111-8 (2017)
Electrostatic properties of asymmetrically contacted carbon nanotube barrier-free bipolar diode photodetector are studied by solving the Poisson equation self-consistently with equilibrium carrier statistics. For electric field parallel to tube’s a
Externí odkaz:
https://doaj.org/article/73d2754cc5b944f2a8d7d05abd98e95a
Publikováno v:
AIP Advances, Vol 5, Iss 5, Pp 057136-057136-8 (2015)
Carrier mobility extraction methods for graphene based on field-effect measurements are explored and compared according to theoretical analysis and experimental results. A group of graphene devices with different channel lengths were fabricated and m
Externí odkaz:
https://doaj.org/article/0193a57cecb349218bedaff14fff8323
Publikováno v:
AIP Advances, Vol 2, Iss 4, Pp 041403-041403-14 (2012)
The electronic properties of conventional semiconductor are usually controlled by doping, which introduces carriers into the semiconductor but also distortion and scattering centers to the otherwise perfect lattice, leading to increased scattering an
Externí odkaz:
https://doaj.org/article/c9e8cceee824437786cb74596c2bdcfd