Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Liam Cunnane"'
Publikováno v:
ECS Transactions. 27:139-144
Post implant resist strip for sub-65 nm highdose implant (HDI) poses challenges with regard to Si substrate loss due to oxidation. In order to ensure the desired device characteristics, this loss must be kept to a minimum, typically less than 4A loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80a008368eb77c05d969dbac0b4de82
https://doi.org/10.1149/1.3360609
https://doi.org/10.1149/1.3360609
Publikováno v:
III-Vs Review. (4):42-45
In spite of the substantial progress made in the last decade, the GaAs IC industry is still far from reaching the high manufacturing yields established by the Si fabs. High volume applications that target the large consumer electronics market bring a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbed0c8a4bdbb0b57c0ff074b8eb9e5e