Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Liakh-Kaguy N. S."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3-4, Pp 3-9 (2019)
The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals,
Externí odkaz:
https://doaj.org/article/f28a84af686945daaae4ec10de73f259
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 3-7 (2017)
Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction has been developed based on the studies of electrical conductivity and magnetoresistance of silicon and germanium microcrystals in the temperat
Externí odkaz:
https://doaj.org/article/44de51570b1d4c2b8498691ddcb9f95d
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 19-23 (2015)
Currently, silicon and germanium, the most common materials in the production of discrete semiconductor devices and integrated circuits, do not always meet all the requirements to the sensing elements of mechanical quantities sensors. Therefore, it i
Externí odkaz:
https://doaj.org/article/91ccc13131a845878c025f0e30424c54
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 23-26 (2013)
The article presents the design of a pressure-temperature sensor based on p-type silicon whiskers, doped with boron, with a resistivity of 0,005 Ohm?cm. The sensor is operable in a temperature range from –100 to +200°C and at pressures from 0 to 2
Externí odkaz:
https://doaj.org/article/c4e447947e2e4cdc8b8fc052a85aa411
Publikováno v:
Physics and Chemistry of Solid State; Vol 18, No 2 (2017); 194-197
Фізика і хімія твердого тіла; Vol 18, No 2 (2017); 194-197
Фізика і хімія твердого тіла; Vol 18, No 2 (2017); 194-197
Temperature dependencies of Bi2Se3 whiskers’ resistance with Pd doping concentration of 11019 cm-3 where measured in temperature range 4.2 - 300 K. At temperature 5.3 K a sharp drop in the whisker resistance was found. The observed effect is likely
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Publikováno v:
Journal of Nano- & Electronic Physics; 2020, Vol. 12 Issue 5, p05017-1-05017-4, 4p
Publikováno v:
Journal of Nano- & Electronic Physics; 2019, Vol. 11 Issue 4, p1-5, 5p
Publikováno v:
2016 International Conference on Electronics & Information Technology (EIT); 2016, p1-4, 4p
Publikováno v:
Journal of Nano- & Electronic Physics; 2017, Vol. 9 Issue 5, p1-5, 5p