Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Lia Trapaidze"'
Publikováno v:
EXPERIMENTAL & CLINICAL MEDICINE GEORGIA.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::715f33318950e6b25c88959be6726d3d
https://doi.org/10.52340/jecm.2023.02.09
https://doi.org/10.52340/jecm.2023.02.09
Autor:
Heiko B. Weber, Michael Krieger, Gerhard Pensl, R. Hollweck, Bernd Zippelius, Svetlana Beljakowa, Lia Trapaidze
Publikováno v:
Materials Science Forum. :257-260
Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate Fe-related defect centers from defects caused by implantation damage, a corresponding Ar-profile was implanted. No Fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e46833e0f1f125211360d53e062c0f64
https://doi.org/10.4028/www.scientific.net/msf.679-680.257
https://doi.org/10.4028/www.scientific.net/msf.679-680.257
Autor:
Gerhard Pensl, Yuichiro Nanen, Svetlana Beljakowa, Tsunenobu Kimoto, Lia Trapaidze, Bernd Zippelius, Michael Krieger
Publikováno v:
Materials Science Forum. :487-490
The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). The preannealing process causes a decrease of the Hall mobility and the effective mobility, and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0b9aea5eec66ef3523c10f7efdac7c
https://doi.org/10.4028/www.scientific.net/msf.645-648.487
https://doi.org/10.4028/www.scientific.net/msf.645-648.487
Autor:
Hisayoshi Itoh, Gerhard Pensl, Michael Weidner, Sergey A. Reshanov, Tsunenobu Kimoto, Takeshi Ohshima, Lia Trapaidze, Adolf Schöner
Publikováno v:
Materials Science Forum. :439-442
Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-cen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67f8e5b69e6d71674ebb53ce0fddb43
https://doi.org/10.4028/www.scientific.net/msf.645-648.439
https://doi.org/10.4028/www.scientific.net/msf.645-648.439
Autor:
Hiroyuki Nagasawa, Michael Krieger, Lia Trapaidze, Adolf Schöner, Naoki Hatta, Svetlana Beljakowa, Masayuki Abe, Gerhard Pensl, Thomas Frank
Publikováno v:
Materials Science Forum. :727-730
3C-SiC/SiO2-capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. A double peak structure is observed in the conductance spectra indicating two types of traps, which ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15b87b36b183b5f4ab8da474ddd86176
https://doi.org/10.4028/www.scientific.net/msf.600-603.727
https://doi.org/10.4028/www.scientific.net/msf.600-603.727
Autor:
Masayuki Abe, Michael Krieger, Heiko B. Weber, Svetlana Beljakowa, Naoki Hatta, Lia Trapaidze, Adolf Schöner, Hiroyuki Nagasawa, Gerhard Pensl, Thomas Frank
Publikováno v:
Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1
3C-SiC/SiO2 capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. An unexpected double peak structure is observed in the conductance spectra indicating two types of ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dae7d5fa9154b43ab311744994bb09cc
https://doi.org/10.1002/pssb.200844062
https://doi.org/10.1002/pssb.200844062