Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Li-Shyue Lai"'
Autor:
Wen Yen Chen, Sheng Wei Lee, An Tai Chou, Wen-Hao Chang, Pan Shiu Chen, Zingway Pei, Tzu Min Hsu, Li Shyue Lai, S. C. Lu, M. J. Tsai
Publikováno v:
Applied Surface Science. 224:165-169
Electroluminescence devices that use Si/Ge multilayer quantum dots as emission material emitting at 1.3 and 1.5 μm are reported in this paper. The Si/Ge quantum dots were made by commercial ultra-high vacuum chemical vapor deposition techniques at 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c433952ef1047283f0fec7d8e7b79ec6
https://doi.org/10.1016/j.apsusc.2003.08.106
https://doi.org/10.1016/j.apsusc.2003.08.106
Autor:
Tzu Min Hsu, Wen Yen Chen, An Tai Chou, Li Shyue Lai, Pan Shiu Chen, Zingway Pei, Wen-Hao Chang
Publikováno v:
Applied Surface Science. 224:148-151
Photoluminescence spectroscopy has been used to study the optical properties of multiple stacked Ge/Si quantum dots (QDs) with different thickness of Si spacers inserted between the Ge dot layers. According to the emission energy of the stacked Ge/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c205af379b2fcd8b502aff0e9b03a54
https://doi.org/10.1016/j.apsusc.2003.08.040
https://doi.org/10.1016/j.apsusc.2003.08.040
Autor:
Li Shyue Lai, An Tai Chou, Wen Yen Chen, Wen-Hao Chang, Pan Shiu Chen, Tzu Min Hsu, Zingway Pei
Publikováno v:
Journal of Applied Physics. 93:4999-5002
Photoluminescence investigations on stacked Ge/Si dots with different spacer thicknesses are presented. According to the emission energy shift in the Ge dots, we found that a thinner spacer layer will lead to remarkable Ge–Si intermixing during the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0401fa583bd1649e0752bc4e7f84c6c
https://doi.org/10.1063/1.1564883
https://doi.org/10.1063/1.1564883
Autor:
Y.T. Tseng, Chen Peng-Shiu, Y.-M. Hsu, C.S. Liang, Ming-Jinn Tsai, S.C. Lu, Zingway Pei, Chee-Wee Liu, Li-Shyue Lai
Publikováno v:
IEEE Electron Device Letters. 24:643-645
A novel phototransistor is fabricated by placing Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells (MQWs) between the base and the collector of Si-SiGe heterojunction bipolar transistors (HPT). The SiGe-Si MQWs are used as a light absorption layer. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a05b6b13326accbf39ac8db1ea627634
https://doi.org/10.1109/led.2003.817870
https://doi.org/10.1109/led.2003.817870
Autor:
Pei-Wen Li, Wei-Ming Liao, Ching-Chieh Shih, Ming-Jinn Tsai, Tine-Shang Kuo, Li-Shyue Lai, Yang-Tai Tseng
Publikováno v:
IEEE Electron Device Letters. 24:454-456
We have investigated the effect of substrate biasing on the subthreshold characteristics and noise levels of Si/Si/sub 1-x/Ge/sub x/ (x=0,0.15,0.3) heterostructure MOSFETs. A detailed analysis of the dependence of threshold voltage, off-state current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a74016a4217084abd54e92efa330f3
https://doi.org/10.1109/led.2003.814023
https://doi.org/10.1109/led.2003.814023
Autor:
Chia-Cheng Ho, Liang-Gi Yao, Tsu-Hsiu Perng, Chia-Pin Lin, Chu-Yun Fu, Chia-Feng Hu, Chih-Hao Chang, Chia-Cheng Chen, Ta-Ming Kuan, Hun-Jan Tao, Ting-Chu Ko, Shyue-Shyh Lin, Shih-Ting Hung, Neng-Kuo Chen, Chen Tzu-Chiang, Ching-Yu Chan, Hong-Nien Lin, Ming-Feng Shieh, Hsien-Chin Lin, Clement Hsingjen Wann, Tsung-Lin Lee, Shu-Ting Yang, M. Cao, Chih-Chieh Yeh, H. C. Lin, Jeff J. Xu, Shih-Cheng Chen, Chih-Sheng Chang, Li-Shyue Lai, Jyh-Cheng Sheu, Wei-Hsiung Tseng, Feng Yuan, C.H. Chang
Publikováno v:
2010 International Electron Devices Meeting.
We show that FinFET, a leading transistor architecture candidate of choice for high performance CPU applications [1–3], can also be extended for general purpose SoC applications by proper device optimization. We demonstrate superior, best-in-its-cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e100479e1546404055154726f5e6d8
https://doi.org/10.1109/iedm.2010.5703473
https://doi.org/10.1109/iedm.2010.5703473
Autor:
Ming-Huan Tsai, Yu-Lien Huang, Li-Te Lin, Wang Shiang-Bau, Hung-Ming Chen, Eric Ou-Yang, Yuh-Jier Mii, Hsien-Hsin Lin, Hun-Jan Tao, Chia-Cheng Ho, Chen-Ping Chen, Jhon-Jhy Liaw, Jyh-Cherng Sheu, Feng Yuan, Chu-Yun Fu, Yi-Hsuan Liu, Li-Shiun Chen, Chia-Feng Hu, Chen-Nan Yeh, Shih-Peng Tai, Ming-Jie Huang, Chih-Sheng Chang, C.H. Chang, Shu-Tine Yang, Jeff J. Xu, Tsung-Lin Lee, Li-Shyue Lai, Shao-Ming Yu, Clement Hsingjen Wann, Kai-Ting Tseng, Leo Chen, Chih-Chieh Yeh, Ming-Feng Shieh, Chien-Chang Su, Jeng-Jung Shen, Shyue-Shyh Lin, Shih-Ting Hung, Hsien-Chin Lin, Shin-Chih Chen, Kin-Weng Wang, Yuan-Hung Chiu, Tsz-Mei Kwok, Fu-Kai Yang
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
FinFET is the most promising double-gate transistor architecture [1] to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-Fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144d7411e1ccabb3bfe552132a866a0f
https://doi.org/10.1109/iedm.2009.5424367
https://doi.org/10.1109/iedm.2009.5424367
Autor:
Ray Duffy, Gerben Doornbos, H. Roberts, Liesbeth Witters, Annelies Delabie, Andriy Hikavyy, Monja Kaiser, R.J.R. Lander, Sofie Mertens, Serge Biesemans, G. Curatola, R. G. R. Weemaes, Rita Rooyackers, Georgios Vellianitis, Stephan Beckx, Li-Shyue Lai, Malgorzata Jurczak, C. Torregiani, Frederik Leys, C. Jonville, Bartek Pawlak, F.C. Voogt, T. Vandeweyer, D. Donnet, Nadine Collaert, C. Delvaux, M.J.H. van Dal, J. Petty, Marc Demand
Publikováno v:
2007 IEEE International Electron Devices Meeting.
Excellent performance (995 muA/mum at Ioff=94 n A/mum and Vdd=lV) and short channel effect control are achieved for tall, narrow FinFETs without mobility enhancement. Near-ideal fin/gate profiles are achieved with standard 193 nm immersion lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5967a30f3976ce16484408c584f36d01
https://doi.org/10.1109/iedm.2007.4419037
https://doi.org/10.1109/iedm.2007.4419037
Autor:
A. De Keersgieter, K. von Arnim, Li-Shyue Lai, Damien Lenoble, Axel Nackaerts, K.T. San, Serge Biesemans, Isabelle Ferain, K. De Meyer, Peter Verheyen, N.J. Son, R. Rooyackers, Nadine Collaert, Bartek Pawlak, Abdelkarim Mercha, T. Schulz, Liesbeth Witters, M.J.H. van Dal, Abhisek Dixit, Malgorzata Jurczak
Publikováno v:
ESSDERC 2007 - 37th European Solid State Device Research Conference.
Due to the limited control of the short channel effects, the high junction leakage caused by band-to-band tunneling and the dramatically increased VT statistical fluctuations, the scaling of planar bulk MOSFETs becomes more and more problematic with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::397c8e515d8016d3463f992e964efb48
https://doi.org/10.1109/essderc.2007.4430899
https://doi.org/10.1109/essderc.2007.4430899
Autor:
Wen-Yen Cheng, Zingway Pei, Wen-Hao Chang, Li-Shyue Lai, An-Tai Chou, Tzu-Min Hsu, Pan-Shiu Chen
Publikováno v:
CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671).
Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to the emission energy shift in the Ge dots, we found that thinner spacer will lead to remarkable Ge-Si intermixing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8287c03e48ce8e3430d15995531c5e0a
https://doi.org/10.1109/cleopr.2003.1277176
https://doi.org/10.1109/cleopr.2003.1277176