Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Li-Hong Laih"'
Autor:
Li-Hong Laih, 賴利弘
87
The fabrication and characteristics of the Si-based planar metal-semiconductor-metal photodetectors (MSM-PD''s) had been investigated in this dissertation. These MSM-PD''s could be easily integrated into the Si optoelectronic integrated circu
The fabrication and characteristics of the Si-based planar metal-semiconductor-metal photodetectors (MSM-PD''s) had been investigated in this dissertation. These MSM-PD''s could be easily integrated into the Si optoelectronic integrated circu
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50396341267984401568
Autor:
Li-Hong Laih, 賴利弘
83
In this thesis, six types of planar metal-semiconductor- metal photodetectors (MSM-PDs) made of hydrogenated amorphous silicon (a-Si:H) and its alloys on silicon wafer and Corning 7059 glass substrate were studied. To improve the responsivity
In this thesis, six types of planar metal-semiconductor- metal photodetectors (MSM-PDs) made of hydrogenated amorphous silicon (a-Si:H) and its alloys on silicon wafer and Corning 7059 glass substrate were studied. To improve the responsivity
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/80008220095179159970
Autor:
Hao-Chung Kuo, Ya-Hsien Chang, Li Hong Laih, Fang-I Lai, C. P. Song, S.C. Wang, Tao Hung Hsueh, H. P. Yang
Publikováno v:
Semiconductor Science and Technology. 19:L86-L89
High-speed single transverse mode 850 nm vertical cavity surface emitting lasers (VCSELs) with large emission aperture with a diameter of 8 µm were fabricated. These VCSELs exhibit good performance with threshold currents of 1.5 mA, a single transve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7e42671920145f4cd973882ab454c73
https://doi.org/10.1088/0268-1242/19/8/l02
https://doi.org/10.1088/0268-1242/19/8/l02
Autor:
Li-Hong Laih, Wen-Chin Tsay, Yen-Ann Chen, Chin-Chuan Cheng, Yuan-Hann Chang, Chung-Ren Li, S.R. Hou, Jyh-Wong Hong, Willis Lin, Augustine E. Chen, Song-Tsang Chiang, Wei-Chen Liang, Hsien-Jen Ting
Publikováno v:
IEEE Transactions on Nuclear Science. 45:186-194
8/spl times/4 cm/sup 2/ single-sided p/sup +/-i (or v)-n/sup +/ silicon microstrip sensors with coupling capacitors and polysilicon bias resistors were fabricated with the planar technology, and various techniques used to reduce the leakage currents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29ec86a72bb8e0c87822173cb7bf204
https://doi.org/10.1109/23.664170
https://doi.org/10.1109/23.664170
Autor:
Hsien Jen Ting, Chung Ren Li, Song Tsang Chiang, Jyh-Wong Hong, Yuan-Hann Chang, Willis Lin, Caleb C.P. Cheng, Jyh Dong Tang, Augustine E. Chen, S.R. Hou, Li Hong Laih, Wei Chen Liang, Wen Chin Tsay, Yen Ann Chen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 405:13-19
The 8 × 4 cm 2 single-sided double-metal p + -i-n + silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd2d2fe3686f31c2395deaa62ac6ffa5
https://doi.org/10.1016/s0168-9002(97)01196-0
https://doi.org/10.1016/s0168-9002(97)01196-0
Publikováno v:
IEEE Transactions on Electron Devices. 45:2018-2023
U-grooved metal-semiconductor-metal photodetectors (UMSM-PD's) having various trench depths of interdigitated electrodes and an intrinsic hydrogenated amorphous silicon (i-a-Si:H) to c-Si heterojunction have been fabricated successfully on a p-type [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c6189208f221c394f37da5618196dcb
https://doi.org/10.1109/16.711369
https://doi.org/10.1109/16.711369
Publikováno v:
Solid-State Electronics. 41:1693-1697
Various amorphous silicon alloy films (i.e. i-a-Si:H, i-a-Si 0.65 Ge 0.35 :H, and i-a-Si 0.56 C 0.44 :H) were deposited on crystalline silicon (c-Si) wafers to form amorphous-crystalline heterojunctions which could be used to enhance the performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d39537bf9ed22c76252aedf65498eae8
https://doi.org/10.1016/s0038-1101(97)00177-9
https://doi.org/10.1016/s0038-1101(97)00177-9
Publikováno v:
IEEE Transactions on Electron Devices. 44:565-571
a-SiC:H p-i-n thin-film LED's (TFLED's) containing a single graded-gap p-i-n junction (SG) or double graded-gap p-i-n and i-n junctions (DG) have been postulated and fabricated successfully on indium-tin-oxide (ITO)-coated glass substrates, with a pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::739670c39ec5411391e2f4725959e0c4
https://doi.org/10.1109/16.563359
https://doi.org/10.1109/16.563359
Publikováno v:
IEEE Transactions on Electron Devices. 44:1360-1366
The graded-gap a-SiC:H-based p-i-n thin-film light-emitting diodes (TFLEDs) with an additional low-resistance and high-reflectance n/sup +/-a-SiCGe:H layer were proposed and fabricated on indium-tin-oxide (ITO)-coated glass substrate in this paper. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b79dad855e38be85f32691bb2199b98
https://doi.org/10.1109/16.622587
https://doi.org/10.1109/16.622587
Publikováno v:
IEEE Photonics Technology Letters. 16:1423-1425
We report the utilization of an As/sup +/-implanted AlGaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As/sup +/-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b9506b771db4a5a4aa23bb61661eea
https://doi.org/10.1109/lpt.2004.827116
https://doi.org/10.1109/lpt.2004.827116