Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Li-Heng Li"'
Autor:
Yuan Qin, Li‐Heng Li, Zhaoan Yu, Feihong Wu, Danian Dong, Wei Guo, Zhongfang Zhang, Jun‐Hui Yuan, Kan‐Hao Xue, Xiangshui Miao, Shibing Long
Publikováno v:
Advanced Science, Vol 8, Iss 20, Pp n/a-n/a (2021)
Abstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐p
Externí odkaz:
https://doaj.org/article/f1204b88532c40e8a0f6c25cf1918c31
Autor:
Ge-Qi Mao, Kan-Hao Xue, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, Xiang-Shui Miao
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105007-105007-9 (2019)
The exact composition and structure of conductive filaments in hafnia-based memristors are still not fully understood, but recent theoretical investigations reveal that hexagonal HfOx phases close to the h.c.p. Hf structure are probable filament cand
Externí odkaz:
https://doaj.org/article/f8ebfcff8fa944fb92d95dd9888c556d
Autor:
Xueqiang Xiang, Li-Heng Li, Chen Chen, Guangwei Xu, Fangzhou Liang, Pengju Tan, Xuanze Zhou, Weibing Hao, Xiaolong Zhao, Haiding Sun, Kan-Hao Xue, Nan Gao, Shibing Long
Publikováno v:
Science China Materials. 66:748-755
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3fd7dbc21bde6ae710e559d7ecba0ad
https://doi.org/10.1007/s40843-022-2167-x
https://doi.org/10.1007/s40843-022-2167-x
Autor:
Wei Zhang, Xiangshui Miao, Jun-Hui Yuan, Chundong Wang, Li Heng Li, Kan-Hao Xue, Xiao Cheng Zeng, Jiafu Wang
Publikováno v:
ACS Applied Materials & Interfaces. 12:13896-13903
Electrocatalysts with high activities toward multiple electrode reactions are scarce and therefore highly sought. Here, we investigate the electrocatalytic performance of the two-dimensional (2D) Pt5Se4 monolayer toward hydrogen evolution reaction (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01fd813a9751048e62ad063e56f48ca3
https://doi.org/10.1021/acsami.9b22674
https://doi.org/10.1021/acsami.9b22674
Publikováno v:
The Journal of Physical Chemistry C. 124:3671-3680
Pt and Pt-based materials are still the most common catalysts for oxygen reduction reaction (ORR), but it is highly desirable to develop efficient ORR electrocatalysts based on inexpensive metals. ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1b8ab2f740aaa56e3b67a60f1267932
https://doi.org/10.1021/acs.jpcc.9b11004
https://doi.org/10.1021/acs.jpcc.9b11004
The highly non-linear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. Theoretical understanding into its switching mechanism has been focused on the processes of conductive filament generation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::179aa373a668d5c60b109bd11573106a
Autor:
Hanli Cui, Shengxin Yang, Jun-Hui Yuan, Li-Heng Li, Fan Ye, Jinhai Huang, Kan-Hao Xue, Xiangshui Miao
Publikováno v:
Computational Materials Science. 213:111669
The Kohn-Sham gaps of density functional theory (DFT) obtained in terms of local density approximation (LDA) or generalized gradient approximation (GGA) cannot be directly linked to the fundamental gaps of semiconductors, but in engineering there is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2d4ff18492d246877f7040dc7acd2ce
https://doi.org/10.1016/j.commatsci.2022.111669
https://doi.org/10.1016/j.commatsci.2022.111669
Publikováno v:
Nanoscale. 11:1131-1139
Two-dimensional materials with high carrier mobility and tunable magnetism are in high demand for nanoelectronic and spintronic applications. Herein, we predict a novel two-dimensional monolayer KTlO that possesses an indirect band gap of 2.25 eV (ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::639dd018a454a965fd9197cf839a8795
https://doi.org/10.1039/c8nr08046a
https://doi.org/10.1039/c8nr08046a
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this paper, the microscopic mechanisms of the transition metal oxides/RuO 2 memristor showing great performance in the recent advances were presented using ab initio theoretical methods. The calculations of oxygen vacancy formation, the Schottky b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7db75497520489b4378abc09f672b3fc
https://doi.org/10.1109/edtm50988.2021.9420968
https://doi.org/10.1109/edtm50988.2021.9420968
Autor:
Yi‐Fan Lu, Hao‐Yang Li, Yi Li, Li‐Heng Li, Tian‐Qing Wan, Ling Yang, Wen‐Bing Zuo, Kan‐Hao Xue, Xiang‐Shui Miao
Publikováno v:
Advanced Electronic Materials. 8:2200202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::171ba51e029ad8220c7ff6d413b6f23c
https://doi.org/10.1002/aelm.202200202
https://doi.org/10.1002/aelm.202200202