Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Li Runling"'
Publikováno v:
In Journal of Sound and Vibration 27 October 2022 537
Publikováno v:
In Ecological Informatics November 2016 36:181-189
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f28a8cd9a8f096c2fbdc0d540bb79b2
https://doi.org/10.1109/cstic55103.2022.9856832
https://doi.org/10.1109/cstic55103.2022.9856832
Autor:
Robinson, John C., Sendelbach, Matthew J., Li, Runling, Hsu, I-Kai, Brozek, Tomasz, Yang, Linrong, He, Debiao, Wu, Fangrui, Ren, Jiadong, Zhu, Yefang, Zhang, Yan, Liu, Pei, Zhang, Haiqiong, Zhang, Guifeng, Fu, Yingying, Yin, Shan, Jia, Yujie, Yu, Bo
Publikováno v:
Proceedings of SPIE; May 2022, Vol. 12053 Issue: 1 p120531U-120531U-7, 1084787p
Publikováno v:
Annals of Glaciology. 54:133-138
Surface elevation data for sea ice in the northwesternty - Weddell Sea, Antarctica, collected by a helicopter-borne laser altimeter during the Winter Weddell Outflow Study 2006, were used to estimate the form drag on pressure ridges and its contribut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b22336323a083727eb074621a84d48
https://doi.org/10.3189/2013aog62a092
https://doi.org/10.3189/2013aog62a092
Autor:
Li Runling, Li Quanbo, Yi Chunyan, Chong Ermin, Huang Jun, Ma Zhibiao, Zhang Yu, Albert Pang, Gai Chenguang
Publikováno v:
2015 China Semiconductor Technology International Conference.
The gate for FinFET structure is graved into a 3D architecture just as a fin fork so that we can control device on/off through the surfaces of its top and two sides. Such design can greatly improve the controllability of circuit and reduce leakage an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb72bcc795a8da07552a11d73354606
https://doi.org/10.1109/cstic.2015.7153391
https://doi.org/10.1109/cstic.2015.7153391
Autor:
Lei Tong, Bao Yu, Sang Ningbo, Zhou Xiaoqiang, Zhou Jun, Li Runling, Fang Li, Zhong Bin, Gang Shi, Ding Yi, Haifeng Zhou, Fang Jingxun, Yi Hailan
Publikováno v:
2015 China Semiconductor Technology International Conference.
In this paper, a conception of Dep-Etch-Dep was proposed to extend the gap-fill capability of High Aspect Ratio Process (HARP) for Shallow Trench Isolation (STI) at 28nm node. Silicon oxide liner deposited by Atom Layer Deposition (ALD), which has no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e06cbb9d3b789d553c35012cf60191c
https://doi.org/10.1109/cstic.2015.7153405
https://doi.org/10.1109/cstic.2015.7153405
Akademický článek
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Akademický článek
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Publikováno v:
1999 International Conference on Computational Electromagnetics and its Applications. Proceedings (ICCEA'99) (IEEE Cat. No.99EX374).
This paper mainly discusses antenna structure's discrete variables optimum design under multiple loading conditions in accordance with the complexity of antenna structure carried and of working status. First, a more comprehensive optimum engineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ce54a14de715985fde7ab6601213292
https://doi.org/10.1109/iccea.1999.825101
https://doi.org/10.1109/iccea.1999.825101