Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Li Jung Liu"'
Autor:
Tang-Kai Chen, Li-Jung Liu, Yu-Chi Tsao, Jenn-Kai Tsai, Tian-Chiuan Wu, Yu-Pin Luo, Teen-Hang Meen, Chi-Ting Ho
Publikováno v:
2021 IEEE 3rd Eurasia Conference on IOT, Communication and Engineering (ECICE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853a12c49d4cfb42380ef22caf090fa3
https://doi.org/10.1109/ecice52819.2021.9645675
https://doi.org/10.1109/ecice52819.2021.9645675
Autor:
Kuei-Shu Chang-Liao, Li-Jung Liu, Chen-Chien Li, Tzu-Hsiang Su, Wei-Fong Chi, Chia-Chi Tsai, Mong-Chi Li, Yu-Wei Chang, Chung-Hao Fu, Chun-Chang Lu, Ting-Chun Chen
Publikováno v:
IEEE Electron Device Letters. 37:12-15
Electrical characteristics of Ge pMOSFETs with HfO2, ZrO2, ZrO2/HfO2, and HfZrO x gate dielectrics are studied in this letter. A lower equivalent oxide thickness (EOT) is obtained in ZrO2 device, which, however, has a higher interface trap density (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ab222e9673c689c951f744f8e4709ee
https://doi.org/10.1109/led.2015.2497348
https://doi.org/10.1109/led.2015.2497348
Publikováno v:
IEEE Electron Device Letters. 36:1314-1317
Charge-trapping (CT) flash memory devices with Ge channel are studied for the first time. The operation characteristics of Ge-channel devices with different interfacial layers (IL), including GeO2, GeON, and AlON, are investigated. The programming/er
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de5184659197a82ef3ea67e8acd38c8
https://doi.org/10.1109/led.2015.2495344
https://doi.org/10.1109/led.2015.2495344
Publikováno v:
Thin Solid Films. 570:288-292
An epitaxial L 1 0 FePt thin film grown from an [Fe(10 A)/Pt(10 A)] 15 multilayer with the orientation of (001) was prepared by an ion beam sputtering deposition method without buffer layer. From the measurement data of X-ray diffraction and X-ray re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd21e1f6b697e19e9a1841d44d5ee65
https://doi.org/10.1016/j.tsf.2014.03.022
https://doi.org/10.1016/j.tsf.2014.03.022
Autor:
Chun-Chang Lu, Jen-Wei Cheng, Chen-Chien Li, Li-Jung Liu, Chung-Hao Fu, Kuei-Shu Chang-Liao, Ting-Ching Chen
Publikováno v:
IEEE Transactions on Electron Devices. 61:2662-2667
A Ge MOS device with an ultralow equivalent oxide thickness of ~0.5 nm and acceptable leakage current of 0.5 A/cm 2 is presented in this paper. The superior characteristics can be attributed to a tetragonal HfO 2 with a higher k value (k ~ 31) and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4616343bd942b790e01e8f29ef8a263
https://doi.org/10.1109/ted.2014.2329839
https://doi.org/10.1109/ted.2014.2329839
Publikováno v:
ECS Transactions. 58:93-101
Programming and retention characteristics of charge-trapping (CT) non-volatile memory (NVM) devices can be enhanced by inserting Al2O3 between Si3N4 and HfO2 as the charge-trapping layer. This is because most of the injecting charges are trapped at S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30906b3d9b46f83566f0251eee3efed
https://doi.org/10.1149/05805.0093ecst
https://doi.org/10.1149/05805.0093ecst
Publikováno v:
Thin Solid Films. 533:1-4
P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70408a336f401c90c6ee2ec703df0a3d
https://doi.org/10.1016/j.tsf.2012.11.115
https://doi.org/10.1016/j.tsf.2012.11.115
Publikováno v:
Microelectronic Engineering. 88:1159-1163
Charge-trapping flash memory devices with super-lattice channels having different stacking structures and thicknesses of Ge top-layer are investigated in this work. Both programming and erasing speeds are significantly improved for devices with super
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5cbfde7cd7d083f697feea1b5ff1599
https://doi.org/10.1016/j.mee.2011.03.131
https://doi.org/10.1016/j.mee.2011.03.131
Publikováno v:
IEEE Electron Device Letters. 35:1025-1027
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::372c2f51be75d012c151398b62603878
https://doi.org/10.1109/led.2014.2348714
https://doi.org/10.1109/led.2014.2348714
Autor:
Jen-Wei Cheng, Chun-Chang Lu, Ting-Ching Chen, Chung-Hao Fu, Kuei-Shu Chang-Liao, Tzu-Min Lee, Chen-Chien Li, Li-Jung Liu, Tien-Ko Wang
Publikováno v:
IEEE Electron Device Letters. 35:509-511
Ge MOS devices with about 95% Ge4+ in HfGeOx interfacial layer are obtained by H2O plasma process together with in situ desorption before atomic layer deposition (ALD). The equivalent oxide thickness is scaled down to 0.39 nm; the leakage current is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba199c01014984ece94a349f9946008
https://doi.org/10.1109/led.2014.2310636
https://doi.org/10.1109/led.2014.2310636