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pro vyhledávání: '"Li Juin Yip"'
Autor:
Michael Hutzler, Ralf Siemieniec, Oliver Blank, David Laforet, Li Juin Yip, Alan Huang, Ralf Walter
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 28:477-494
Low-voltage power MOSFETs based on charge-compensation using a field-plate offer a significant reduction of the area-specific on-resistance. Beside a further improvement of this key parameter, the new device generation takes an in-depth focus on the
In this paper we demonstrate, for the first time, electrical results of vertical LOCOS based Insulated Base Transistors (IBT) fabricated in a 85 V BiCMOS process. Experimental results show that the devices exhibit ‘transistor like’ characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c41961b42cb3412a478da171c427fb3
http://hdl.handle.net/2086/3334
http://hdl.handle.net/2086/3334
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's; 2009, p235-238, 4p