Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Li Feng Teng"'
Autor:
Guang Ting Zheng, Yao Jen Lee, Meng-Chyi Wu, Chur Shyang Fuh, Li Feng Teng, Chih Hsiang Chang, Po-Tsun Liu
Publikováno v:
Thin Solid Films. 619:148-152
In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time ( τ ) derived
Publikováno v:
ECS Transactions. 50:257-268
Po-Tsun Liu, Li-Wei Chu, Li-Feng Teng, Yang-Shun Fan and Chur-Shyang Fuh 1. Department of Photonics & Display Institute, National Chiao Tung University, Hsinchu, Taiwan, 30010, R.O.C. 2. Department of Photonics & Institute of ElectroOptical Engineeri
Publikováno v:
SID Symposium Digest of Technical Papers. 44:178-181
The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-pa
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:Q1-Q5
The role of oxygen in amorphous InGaZnO thin film transistor (a-IGZO TFT) is studied for the device ambient stability. The threshold voltage (Vth) value of 350◦C annealed a-IGZO TFT decreased apparently with the staying duration, and the average va
Publikováno v:
Thin Solid Films. 520:1489-1494
We examined the characteristics of passivation-free amorphous In–Ga–Zn–O thin film transistor (a-IGZO TFT) devices under different thermal annealing atmospheres. With annealing at higher temperature, the device performed better at the above-thr
Autor:
Simon M. Sze, Yao Jen Lee, Han-Ping D. Shieh, Po-Tsun Liu, Sih-Wei Huang, Li-Feng Teng, Chur-Shyang Fuh
Publikováno v:
IEEE Electron Device Letters. 34:1157-1159
In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricate
Publikováno v:
IEEE Electron Device Letters. 34:1154-1156
In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshol
Autor:
Chih Hsiang Chang, Chur Shyang Fuh, Han-Ping D. Shieh, Li Feng Teng, Sih Wei Huang, Yang Shun Fan, Po-Tsun Liu, Yu Ta Wu
Publikováno v:
SID Symposium Digest of Technical Papers. 44:1026-1028
Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with micro
Publikováno v:
SPIE Newsroom.
Publikováno v:
Oxide-based Materials and Devices.
Thin film transistor (TFT) device structure with transparent conductive oxide semiconductor is proposed for the photosensor application. The adoption of TFT-based photosensor device also is promising to be integrated with pixel-array circuits in a fl