Výsledky vyhledávání - "Li‐shuenn Wang"

Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor

Publikováno v: Journal of The Electrochemical Society. 144:698-704

The charge-to-breakdown (Q bd ) for p + -poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boron-implanted poly-Si samples, Q bd (+) increases with dopant concentration, but Q bd (-) decreases wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9146d515a3082b228b33db54feee50a0
https://doi.org/10.1149/1.1837471

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Erratum: 'Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor,' [J. Electrochem. Soc., 144, 698 (1997)]

Autor: Li‐shuenn Wang, Fon-Shan Huang, Mou‐shiung Lin

Publikováno v: Journal of The Electrochemical Society. 144:1890-1890

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b4e521975e600b51335c0e7ba383971
https://doi.org/10.1149/1.1837698

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