Výsledky vyhledávání - "Li‐Syuan Lu"

Akademický článek

Ultrafast laser ablation, intrinsic threshold, and nanopatterning of monolayer molybdenum disulfide

Autor: Joel M. Solomon, Sabeeh Irfan Ahmad, Arpit Dave, Li-Syuan Lu, Fatemeh HadavandMirzaee, Shih-Chu Lin, Sih-Hua Chen, Chih-Wei Luo, Wen-Hao Chang, Tsing-Hua Her

Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)

Abstract Laser direct writing is an attractive method for patterning 2D materials without contamination. Literature shows that the ultrafast ablation threshold of graphene across substrates varies by an order of magnitude. Some attribute it to the th

Externí odkaz: https://doaj.org/article/2adcc9cdcfec4378a1b50a579df2a2a0

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Akademický článek

Ultrafast multi-shot ablation and defect generation in monolayer transition metal dichalcogenides

Autor: Joel M. Solomon, Sabeeh Irfan Ahmad, Arpit Dave, Li-Syuan Lu, Yu-Chen Wu, Wen-Hao Chang, Chih-Wei Luo, Tsing-Hua Her

Publikováno v: AIP Advances, Vol 12, Iss 1, Pp 015217-015217-6 (2022)

Transition metal dichalcogenides are known to possess large optical nonlinearities, and driving these materials at high intensities is desirable for many applications. Understanding their optical responses under repetitive intense excitation is essen

Externí odkaz: https://doaj.org/article/44def45f54924fda9aa0549507e52571

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Akademický článek

Remote growth of oxide heteroepitaxy through MoS2

Autor: Chun-Hao Ma, Li-Syuan Lu, Haili Song, Jhih-Wei Chen, Ping-Chun Wu, Chung-Lin Wu, Rong Huang, Wen-Hao Chang, Ying-Hao Chu

Publikováno v: APL Materials, Vol 9, Iss 5, Pp 051115-051115-6 (2021)

Advanced heterostructures composed of various materials can induce new physical properties and phenomena among existing materials, representing the essential foundation for modern electronics. Recently, many works have been carried out with novel het

Externí odkaz: https://doaj.org/article/86c4a79901cc45479be3b1c59b6fee13

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Akademický článek

Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers

Autor: Wei-Ting Hsu, Li-Syuan Lu, Po-Hsun Wu, Ming-Hao Lee, Peng-Jen Chen, Pei-Ying Wu, Yi-Chia Chou, Horng-Tay Jeng, Lain-Jong Li, Ming-Wen Chu, Wen-Hao Chang

Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)

The interlayer coupling in van der Waals heterostructures is sensitive to the interlayer atomic registry. Here, the authors investigate the polarisation properties of epitaxially grown, commensurate WSe2/MoSe2 heterobilayers with well-defined atomic

Externí odkaz: https://doaj.org/article/e47ffa3bdba541f4a39f51a25a800d4e

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Akademický článek

Evidence of indirect gap in monolayer WSe2

Autor: Wei-Ting Hsu, Li-Syuan Lu, Dean Wang, Jing-Kai Huang, Ming-Yang Li, Tay-Rong Chang, Yi-Chia Chou, Zhen-Yu Juang, Horng-Tay Jeng, Lain-Jong Li, Wen-Hao Chang

Publikováno v: Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)

Monolayer transition metal dichalcogenides have so far been thought to be direct bandgap semiconductors. Here, the authors revisit this assumption and find that unstrained monolayer WSe2 is an indirect-gap material, as evidenced by the observed photo

Externí odkaz: https://doaj.org/article/296f01bc35924bbdaaf89a2782f6ae99

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