Zobrazeno 1 - 10
of 1 101
pro vyhledávání: '"Li, Songlin"'
Autor:
Xu, Ning, Shi, Li, Pei, Xudong, Zhang, Weiyang, Chen, Jian, Han, Zheng, Samorì, Paolo, Wang, Jinlan, Wang, Peng, Shi, Yi, Li, Songlin
Publikováno v:
Nature Communications, 14, 4074 (2023)
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge trans
Externí odkaz:
http://arxiv.org/abs/2307.08957
Autor:
Zhou, Jian, Zhang, Chunchen, Shi, Li, Kim, Xiaoqing Chen Tae-Soo, Gyeon, Minseung, Wang, Jian Chen Jinlan, Kang, Linwei Yu Xinran Wang Kibum, Orgiu, Emanuele, Samorì, Paolo, Watanabe, Kenji, Taniguchi, Takashi, Tsukagoshi, Kazuhito, Wang, Peng, Shi, Yi, Li, Songlin
Publikováno v:
Nature Communications, 13, 1844 (2022)
The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized contro
Externí odkaz:
http://arxiv.org/abs/2306.15139
Autor:
Li, Shuaixing, Wu, Jianghua, Liang, Binxi, Liu, Luhao, Zhang, Wei, Wazir, Nasrullah, Zhou, Jian, Liu, Yuwei, Nie, Yuefeng, Hao, Yufeng, Wang, Peng, Wang, Lin, Shi, Yi, Li, Songlin
Publikováno v:
Chemistry of Materials, 34, 873 (2022)
Antiferromagnetic (AF) materials are attracting increasing interest of research in magnetic physics and spintronics. Here, we report controllable synthesis of room-temperature AF $\alpha$-MnTe nanocrystals (N\'eel temperature ~ 307 K) via molten-salt
Externí odkaz:
http://arxiv.org/abs/2307.13615
Autor:
Xu, Ning, Hong, Daocheng, Pei, Xudong, Zhou, Jian, Wang, Fengqiu, Wang, Peng, Tian, Yuxi, Shi, Yi, Li, Songlin
Publikováno v:
ACS Photonics, 9, 3404 (2022)
Lattice defects and interfacial absorbates represent two extrinsic but ubiquitous factors that exert profound impacts on the luminescent properties of semiconductors. However, their impacts are normally tangled and remain to be separately elucidated.
Externí odkaz:
http://arxiv.org/abs/2307.00018
Autor:
Shao, Yinjiang, Zhou, Jian, Xu, Ning, Chen, Jian, Watanabe, Kenji, Taniguchi, Takashi, Shi, Yi, Li, Songlin
Publikováno v:
Chinese Physics Letters, 40, 068501 (2023)
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs) that are simu
Externí odkaz:
http://arxiv.org/abs/2306.14171
Publikováno v:
Chinese Physics Letters, 40, 058503 (2023)
Two-dimensional (2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through engineering the vertical distribution of carriers confined inside the
Externí odkaz:
http://arxiv.org/abs/2306.13921
Publikováno v:
Advanced Materials, 35, 2300618 (2023)
Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain completely uniform monolayer semiconductor wafers free of over-grown islands.
Externí odkaz:
http://arxiv.org/abs/2306.13915
Publikováno v:
Nano Letters, 22, 6671 (2022)
Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems,
Externí odkaz:
http://arxiv.org/abs/2306.14925
Autor:
Liang, Binxi, Wang, Anjian, Zhou, Jian, Ju, Shihao, Chen, Jian, Watanabe, Kenji, Taniguchi, Takashi, Shi, Yi, Li, Songlin
Publikováno v:
ACS Applied Materials & Interfaces, 14, 18697 (2022)
Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors that preserves the ultraclean interface quality and intrinsic charge t
Externí odkaz:
http://arxiv.org/abs/2306.15691
Publikováno v:
Applied Physics Letters, 121, 023503 (2022)
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a submicron-long wedge
Externí odkaz:
http://arxiv.org/abs/2306.15690