Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Li, Shouhang"'
Autor:
Sun, Jianshi, Li, Shouhang, Shao, Cheng, Tong, Zhen, An, Meng, Yao, Yuhang, Hu, Yue, Zhu, Xiongfei, Liu, Yifan, Wang, Renzong, Liu, Xiangjun, Frauenheim, Thomas
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperatur
Externí odkaz:
http://arxiv.org/abs/2410.19576
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Xie, Han, An, Meng, Zhang, Chuang, Zhu, Xiongfei, Huang, Chen, Xiong, Yucheng, Liu, Xiangjun
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desire
Externí odkaz:
http://arxiv.org/abs/2406.12187
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, An, Meng, Zhu, Xiongfei, Zhang, Chuang, Chen, Xiangchuan, Xiong, Yucheng, Frauenheim, Thomas, Liu, Xiangjun
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly lim
Externí odkaz:
http://arxiv.org/abs/2406.02874
Autor:
Sun, Jianshi, Liu, Xiangjun, Xiong, Yucheng, Yao, Yuhang, Yang, Xiaolong, Shao, Cheng, Li, Shouhang
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extre
Externí odkaz:
http://arxiv.org/abs/2403.03673
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Chen, Xiangchuan, Liu, Qianqian, Xiong, Yucheng, An, Meng, Liu, Xiangjun
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy dopi
Externí odkaz:
http://arxiv.org/abs/2401.02133
Autor:
Liu, Qianqian, Liu, Xiangjun, Chen, Ge, Feng, Pei, Xiong, Yucheng, An, Meng, Shao, Cheng, Zhu, Xiongfei, Wang, Renzong, Sun, Jianshi, Sun, Jisheng, Guo, Chunfang, Bi, Siyi, Li, Shouhang
Publikováno v:
In Desalination 19 August 2024 583
Publikováno v:
In Surfaces and Interfaces August 2024 51
Autor:
Wang, Renzong, Xiong, Yucheng, Yang, Juekuan, Liu, Zhichun, Li, Shouhang, Chen, Ge, Chen, Ke, Liu, Xiangjun
Publikováno v:
In Materials Today Physics June 2024 45
Publikováno v:
In Materials Today Physics May 2024 44
Publikováno v:
Phys. Rev. B 103, 104301 (2021)
Metallic nanostructures (the nanofilms and nanowires) are widely used in electronic devices, and their thermal transport properties are crucial for heat dissipation. However, there are still gaps in understanding thermal transport in metallic nanostr
Externí odkaz:
http://arxiv.org/abs/2011.07707