Zobrazeno 1 - 10
of 1 159
pro vyhledávání: '"Li, Lain Jong"'
Autor:
Wang, Jiangtao, Zheng, Xudong, Pitner, Gregory, Ji, Xiang, Zhang, Tianyi, Yao, Aijia, Zhu, Jiadi, Palacios, Tomás, Li, Lain-Jong, Wang, Han, Kong, Jing
Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on u
Externí odkaz:
http://arxiv.org/abs/2404.02981
Autor:
Zheng, Fangyuan, Li, Lain-Jong
Publikováno v:
In Micron December 2024 187
Autor:
Zerger, Caleb Z., Rodenbach, Linsey K., Chen, Yi-Ting, Safvati, Benjamin, Brubaker, Morgan Z., Tran, Steven, Chen, Tse-An, Li, Ming-Yang, Li, Lain-Jong, Goldhaber-Gordon, David, Manoharan, Hari C.
Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor action. Fo
Externí odkaz:
http://arxiv.org/abs/2109.01522
Autor:
Qu, Hengze, Zhang, Shengli, Cao, Jiang, Wu, Zhenhua, Chai, Yang, Li, Weisheng, Li, Lain-Jong, Ren, Wencai, Wang, Xinran, Zeng, Haibo
Publikováno v:
In Science Bulletin 30 May 2024 69(10):1427-1436
Autor:
Chen, Tse-An, Chuu, Chih-Piao, Tseng, Chien-Chih, Wen, Chao-Kai, Wong, H. -S. Philip, Pan, Shuangyuan, Li, Rongtan, Zhang, Yanfeng, Fu, Qiang, Yakobson, Boris I., Chang, Wen-Hao, Li, Lain-Jong
Publikováno v:
Nature 579, 219-223 (2020)
We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference
Externí odkaz:
http://arxiv.org/abs/2105.15040
Autor:
Tian, Xuezeng, Yan, Xingxu, Varnavides, Georgios, Yuan, Yakun, Kim, Dennis S., Ciccarino, Christopher J., Anikeeva, Polina, Li, Ming-Yang, Li, Lain-Jong, Narang, Prineha, Pan, Xiaoqing, Miao, Jianwei
Publikováno v:
Sci. Adv. 7, eabi6699 (2021)
The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here w
Externí odkaz:
http://arxiv.org/abs/2104.08978
Autor:
Park, Soohyung, Wang, Haiyuan, Schultz, Thorsten, Shin, Dongguen, Ovsyannikov, Ruslan, Zacharias, Marios, Maksimov, Dmitrii, Meissner, Matthias, Hasegawa, Yuri, Yamaguchi, Takuma, Kera, Satoshi, Aljarb, Areej, Hakami, Mariam, Li, Lain-Jong, Tung, Vincent, Amsalem, Patrick, Rossi, Mariana, Koch, Norbert
Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of charge trans
Externí odkaz:
http://arxiv.org/abs/2103.07962
Akademický článek
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Akademický článek
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Autor:
Tizei, Luiz H. G., Lin, Yung-Chang, Mukai, Masaki, Sawada, Hidetaka, Lu, Ang-Yu, Li, Lain-Jong, Kimoto, Koji, Suenaga, Kazu
Publikováno v:
Phys. Rev. Lett., 114, 107601 (2015)
Spatially resolved EELS has been performed at diffuse interfaces between MoS$_2$ and MoSe$_2$ single layers. With a monochromated electron source (20 meV) we have successfully probed excitons near the interface by obtaining the low loss spectra at th
Externí odkaz:
http://arxiv.org/abs/1906.09409