Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Li, Chao Yong"'
Publikováno v:
In Aerospace Science and Technology March 2020 98
Publikováno v:
In Aerospace Science and Technology February 2020 97
Publikováno v:
In Aerospace Science and Technology 2009 13(2):105-113
Autor:
Li, Chao-Yong, Jing, Wu-Xing
Publikováno v:
In Aerospace Science and Technology 2008 12(2):177-183
Publikováno v:
In Vacuum 2007 81(9):1040-1046
Akademický článek
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Autor:
Heng Yong Seng, Hua Younan, Chen Shuting, Ong Kenny, Liu Binghai, Huang Yanhua, Mo Zhiqiang, Zhu Lei, Teo Han Wei, Li Chao Yong, Yuan Zhaoxin
Publikováno v:
International Symposium for Testing and Failure Analysis.
The back-end-of-line (BEOL) structure of current IC devices fabricated for advanced technologies is composed of film stacks with multiple interfaces. The requirement of high interfacial strength is therefore necessary between the different layers in
Publikováno v:
2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546).
As CMOS transistor scaling proceeds into the deep submicron regime, the number of transistors on high performance, high density ICs is increasing to 45/spl sim/60 millions, in accordance with the historical trend of Moore's Law. It is the fundamental
Autor:
Seung Wook Yoon, Chen Man Tong, Wong Wai Kwan, I.J. Rasiah, Gui Dong, V. Kripesh, Li Chao Yong, M. Iyer
Publikováno v:
53rd Electronic Components and Technology Conference, 2003. Proceedings..
Technological demands require electronic modules to be faster and highly miniaturized in the coming years. Over the last two decades widely used chip metallization has been aluminum and its alloys of aluminum such as AICu or AISiCu. Development of du
Autor:
Li, Chao Yong.
Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1392::a81925b31c943b60197a8515779ffc29
http://hdl.handle.net/10356/4616
http://hdl.handle.net/10356/4616