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Autor:
Ray Duffy, Liesbeth Witters, Gerben Doornbos, Georgios Vellianitis, Andriy Hikavyy, Malgorzata Jurczak, Lhi-Shue Lai, Bartek Pawlak, E. Altamirano, Rita Rooyackers, Monja Kaiser, Nadine Collaert, Mark Van Dal, Blandine Duriez, Tom Vandeweyer, Rob Lander, R. G. R. Weemaes, Marc Demand
Publikováno v:
ECS Transactions. 13:223-234
FinFET is a promising device concept towards the 32 nm CMOS technology node and beyond as it combines the benefits of multi-gated architecture, intrinsically having superior scaling behavior, with a highly manufacturable process. The present paper wi