Zobrazeno 1 - 10
of 1 085
pro vyhledávání: '"Lezec HJ"'
Autor:
Doderer M; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Keller K; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Winiger J; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Baumann M; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Messner A; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Moor D; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Chelladurai D; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Fedoryshyn Y; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Leuthold J; Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland., Strait J; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Agrawal A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Lezec HJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Haffner C; Interuniversity Microelectronics Centre (imec), Remisebosweg 1, 3001 Leuven, Belgium.
Publikováno v:
Nano letters [Nano Lett] 2024 Jan 24; Vol. 24 (3), pp. 859-865. Date of Electronic Publication: 2023 Dec 05.
Autor:
Zhang C; School of Optical and Electronic Information & Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China. cheng.zhang@hust.edu.cn., Chen L; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; University of Maryland, College Park, MD, 20742, USA., Lin Z; School of Optical and Electronic Information & Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China., Song J; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Wang D; School of Optical and Electronic Information & Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China., Li M; School of Optical and Electronic Information & Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China., Koksal O; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Wang Z; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; University of Maryland, College Park, MD, 20742, USA., Spektor G; National Institute of Standards and Technology, Boulder, CO, 80305, USA., Carlson D; National Institute of Standards and Technology, Boulder, CO, 80305, USA., Lezec HJ; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Zhu W; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; University of Maryland, College Park, MD, 20742, USA., Papp S; National Institute of Standards and Technology, Boulder, CO, 80305, USA., Agrawal A; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. amit.agrawal@nist.gov.
Publikováno v:
Light, science & applications [Light Sci Appl] 2024 Jan 22; Vol. 13 (1), pp. 23. Date of Electronic Publication: 2024 Jan 22.
Autor:
Fan Q; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China.; College of Engineering and Applied Sciences and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China., Xu W; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China., Hu X; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China., Zhu W; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.; Maryland NanoCenter, University of Maryland, College Park, Maryland, 20899, USA., Yue T; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. yuetao@nju.edu.cn.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China. yuetao@nju.edu.cn., Yan F; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. fyan@nju.edu.cn.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China. fyan@nju.edu.cn., Lin P; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.; College of Engineering and Applied Sciences and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China., Chen L; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.; Maryland NanoCenter, University of Maryland, College Park, Maryland, 20899, USA., Song J; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA., Lezec HJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA., Agrawal A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA., Lu Y; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. yqlu@nju.edu.cn.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China. yqlu@nju.edu.cn.; College of Engineering and Applied Sciences and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China. yqlu@nju.edu.cn., Xu T; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. xuting@nju.edu.cn.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China. xuting@nju.edu.cn.; College of Engineering and Applied Sciences and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China. xuting@nju.edu.cn.
Publikováno v:
Nature communications [Nat Commun] 2023 Nov 07; Vol. 14 (1), pp. 7180. Date of Electronic Publication: 2023 Nov 07.
Autor:
Chen L; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; University of Maryland, College Park, MD 20742, USA., Zhu W; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; University of Maryland, College Park, MD 20742, USA., Huo P; College of Engineering and Applied Physics, Nanjing University, Nanjing 210093, China., Song J; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Lezec HJ; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Xu T; College of Engineering and Applied Physics, Nanjing University, Nanjing 210093, China., Agrawal A; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Publikováno v:
Science advances [Sci Adv] 2022 Oct 28; Vol. 8 (43), pp. eabq8314. Date of Electronic Publication: 2022 Oct 26.
Autor:
Mejia E; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA. wzh@vt.edu., Song J; Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA.; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Zhao Y; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA. wzh@vt.edu., Qian Y; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA. wzh@vt.edu., Xiao C; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA. wzh@vt.edu., Lezec HJ; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Agrawal A; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Zhou W; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA. wzh@vt.edu.
Publikováno v:
Nanoscale [Nanoscale] 2022 Oct 27; Vol. 14 (41), pp. 15373-15383. Date of Electronic Publication: 2022 Oct 27.
Autor:
Fan Q; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.; College of Engineering and Applied Sciences and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China., Xu W; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China., Hu X; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China., Zhu W; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, 20899, USA., Yue T; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. yuetao@nju.edu.cn.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China. yuetao@nju.edu.cn., Zhang C; School of Optical and Electronic Information, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China., Yan F; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. fyan@nju.edu.cn.; School of Electronic Sciences and Engineering, Nanjing University, Nanjing, 210093, China. fyan@nju.edu.cn., Chen L; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, 20899, USA., Lezec HJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Lu Y; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. yqlu@nju.edu.cn.; College of Engineering and Applied Sciences and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China. yqlu@nju.edu.cn., Agrawal A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, 20899, USA., Xu T; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. xuting@nju.edu.cn.; College of Engineering and Applied Sciences and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China. xuting@nju.edu.cn.
Publikováno v:
Nature communications [Nat Commun] 2022 Apr 19; Vol. 13 (1), pp. 2130. Date of Electronic Publication: 2022 Apr 19.
Autor:
Liu M; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China.; Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China., Zhu W; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20877, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, 20877, USA., Huo P; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China.; Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China., Feng L; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China.; Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China., Song M; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China.; Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China., Zhang C; School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China., Chen L; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20877, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, 20877, USA., Lezec HJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20877, USA., Lu Y; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China. yqlu@nju.edu.cn.; Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China. yqlu@nju.edu.cn., Agrawal A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20877, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, 20877, USA., Xu T; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China. xuting@nju.edu.cn.; Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China. xuting@nju.edu.cn.
Publikováno v:
Light, science & applications [Light Sci Appl] 2021 May 25; Vol. 10 (1), pp. 107. Date of Electronic Publication: 2021 May 25.
Autor:
Liu M; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China.; Collaborative Innovation Center of Advanced Microstructures, Nanjing, China., Huo P; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China.; Collaborative Innovation Center of Advanced Microstructures, Nanjing, China., Zhu W; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, USA., Zhang C; School of Optical and Electronic Information, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China., Zhang S; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China., Song M; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China., Zhang S; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China., Zhou Q; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China., Chen L; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, USA., Lezec HJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA., Agrawal A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA.; Maryland NanoCenter, University of Maryland, College Park, MD, USA., Lu Y; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China. yqlu@nju.edu.cn.; Collaborative Innovation Center of Advanced Microstructures, Nanjing, China. yqlu@nju.edu.cn., Xu T; National Laboratory of Solid-State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China. xuting@nju.edu.cn.; Collaborative Innovation Center of Advanced Microstructures, Nanjing, China. xuting@nju.edu.cn.
Publikováno v:
Nature communications [Nat Commun] 2021 Apr 13; Vol. 12 (1), pp. 2230. Date of Electronic Publication: 2021 Apr 13.
Autor:
Fan Q; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China., Liu M; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; Jiangsu Key Laboratory of Artificial Functional Materials and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China., Zhang C; School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China., Zhu W; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20877, USA.; Maryland NanoCenter, University of Maryland, College Park, Maryland 20877, USA., Wang Y; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; Jiangsu Key Laboratory of Artificial Functional Materials and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China., Lin P; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; Jiangsu Key Laboratory of Artificial Functional Materials and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China., Yan F; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China., Chen L; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20877, USA.; Maryland NanoCenter, University of Maryland, College Park, Maryland 20877, USA., Lezec HJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20877, USA., Lu Y; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; Jiangsu Key Laboratory of Artificial Functional Materials and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China., Agrawal A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20877, USA.; Maryland NanoCenter, University of Maryland, College Park, Maryland 20877, USA., Xu T; National Laboratory of Solid-State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.; Jiangsu Key Laboratory of Artificial Functional Materials and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.
Publikováno v:
Physical review letters [Phys Rev Lett] 2020 Dec 31; Vol. 125 (26), pp. 267402.
Autor:
Nam W; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States., Zhao Y; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States., Song J; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States.; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Ali Safiabadi Tali S; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States., Kang S; Department of Civil and Environmental Engineering, Institute of Critical Technology and Applied Science Sustainable Nanotechnology Center, Virginia Tech, Blacksburg, Virginia 24061, United States., Zhu W; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Lezec HJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Agrawal A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Institute for Research in Electronics and Applied Physics and Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, United States., Vikesland PJ; Department of Civil and Environmental Engineering, Institute of Critical Technology and Applied Science Sustainable Nanotechnology Center, Virginia Tech, Blacksburg, Virginia 24061, United States., Zhou W; Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States.
Publikováno v:
The journal of physical chemistry letters [J Phys Chem Lett] 2020 Nov 19; Vol. 11 (22), pp. 9543-9551. Date of Electronic Publication: 2020 Oct 28.