Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Leye Aina"'
Autor:
Leye Aina
Publikováno v:
Infrared Technology and Applications XLV.
An angle-resolved, true 3D laser sensor system for autonomous vehicles and driverless cars has been developed. This paper will describe the principle and architecture of autonomous vehicle laser sensors with the potential for nanowatt, single digit a
Autor:
H. Hier, Keith W. Goossen, Ayub Fathimulla, Leye Aina, Nupur Bhargava, Victor A. Rodriguez-Toro, James Kolodzey, Ramsey Hazbun, L. Ramdas Ram-Mohan
Publikováno v:
Infrared Physics & Technology. 69:211-217
The addition of nitrogen to III–V alloys has been widely studied as a method of modifying the band gap for mid-infrared (IR) applications. Lattice matching these alloys to convenient substrates such as GaSb, however, is challenging due to the signi
Autor:
Ayub Fathimulla, H. Hier, Matthew Coppinger, Leye Aina, Mark Lecates, James Kolodzey, Nurpur Bhargava, Keith W. Goossen
Publikováno v:
Infrared Physics & Technology. 52:310-316
This paper will describe the first-of-a-kind development and demonstration of dilute nitride strained layer superlattice detectors with detectivity as high as 4 × 10 10 cm Hz 1/2 /W and cut-off wavelength of 11-μm for an LWIR design and a cut-off w
Autor:
Jim Foshee, Parminder Ghuman, Sachi Babu, Harry Hier, Mark Lecates, Leye Aina, Ayub Fathimulla
Publikováno v:
Advanced Photon Counting Techniques III.
This paper reports the demonstration of single photon counting receivers with pulse detection efficiency as high as 68% for 2 photons and single photon counting probabilities as high as 44% at 1550-nm, 1 MHz rate and room temperature and with linear-
Publikováno v:
Optical Fiber Communication Conference and National Fiber Optic Engineers Conference.
We report the development of ultrasensitive photoreceivers, based on ultra high gain and low excess noise APDs, with sensitivities of −35.5 dBm at 2.488 Gbps and 10−10 BER and the potential for 6–12 dB sensitivity enhancement at higher bit rate
Publikováno v:
Journal of Crystal Growth. 107:932-941
The growth by MOVPE and device applications of AlInAs HEMT structures have been reported by several groups over the past few years. This paper reviews the technological achievements up to date, presents recent results on AlInAs HEMTs and discusses fu
Publikováno v:
SPIE Proceedings.
We report high gain, high sensitivity 1064-1550 nm avalanche photodiodes (APDs) that are capable of single photon counting in the linear mode below the breakdown voltage and at room temperature. Epitaxial Technologies has developed AIInAs/GaInAs APDs
Autor:
Mark Lecates, Robert Dwarkin, Harry Hier, Ayub Fathimulla, Leye Aina, David Johnson, Sachi Babu, Jim Foshee
Publikováno v:
SPIE Proceedings.
Epitaxial Technologies has developed a single photon counting photoreceiver that can operate in the linear mode to avoid the drawbacks of Geiger mode detectors. The Company's linear single photon counting photoreceiver array technology is based on ca
Publikováno v:
Applied Physics Letters. 57:492-493
We have grown modulation‐doped AlInAs/InP heterostructures with two‐dimensional electron gases. Hall measurements and Shubnikov‐de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, 2300 cm2/V
Publikováno v:
Journal of Crystal Growth. 93:911-918
High-quality AlInAs exhibiting excellent photoluminescence and having residual electron concentrations as low as 7×10 15 cm −3 with electron mobilities as high as 1900 cm 2 /V·s has been grown by OMVPE. AlInAs/InP heterostructures are shown to be