Zobrazeno 1 - 10
of 126
pro vyhledávání: '"Levon V. Asryan"'
Autor:
M. E. Muretova, A. S. Payusov, A. E. Zhukov, Levon V. Asryan, Mikhail V. Maximov, F. I. Zubov
Publikováno v:
Semiconductors. 54:366-373
In a laser with asymmetric barrier layers (ABLs) two thin barrier layers adjacent to the active region on both sides are intended to prevent bipolar population of the waveguide layers, hence, to suppress parasitic recombination in them. A theoretical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd464724852f07a0f48cdb2007186f59
https://doi.org/10.1134/s1063782620030203
https://doi.org/10.1134/s1063782620030203
Autor:
Cody Hammack, Levon V. Asryan
Publikováno v:
Novel In-Plane Semiconductor Lasers XXI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fcf9244918ef61a96a630fb242fd4f7
https://doi.org/10.1117/12.2609431
https://doi.org/10.1117/12.2609431
Autor:
Levon V. Asryan
Publikováno v:
Quantum Electronics. 49:522-528
A theory of static (threshold and power) characteristics of novel diode lasers – quantum dot (QD) lasers with asymmetric barrier layers (ABLs) – is developed. The barrier layers are asymmetric in that they have considerably different heights for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b616fe5d3cee6807c189c1f312ac976
https://doi.org/10.1070/qel17044
https://doi.org/10.1070/qel17044
Autor:
Levon V. Asryan, Saurav Kar
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-9
The effect of out-tunneling leakage of carriers from quantum dots (QDs) on modulation bandwidth of semiconductor double tunneling-injection (DTI) QD lasers is studied. In this type of laser, as an alternative to conventional pumping, electrons and ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a3a8ecdd2ac1b93c962bb2e8d331ed
https://doi.org/10.1109/jqe.2018.2886395
https://doi.org/10.1109/jqe.2018.2886395
Autor:
Levon V. Asryan, John L. Monk
Publikováno v:
Frontiers in Optics + Laser Science 2021.
Continuous-wave power of ground-state emission in quantum dot lasers with asymmetric barrier layers is studied. Unlike conventional lasers, the power is virtually unaffected by excited-to-ground state relaxation delay of carriers in quantum dots.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2334dd2a2adc76235a38401eb5cf3b36
https://doi.org/10.1364/fio.2021.jth5a.75
https://doi.org/10.1364/fio.2021.jth5a.75
Autor:
Levon V. Asryan
Publikováno v:
Conference on Lasers and Electro-Optics.
Direct modulation bandwidth and optimum dc current maximizing it are discussed for double tunneling-injection quantum dot (QD) lasers and QD lasers with asymmetric barrier layers and compared to those for conventional QD lasers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35369e6cfd05459f94ee3dcd37b5b3cf
https://doi.org/10.1364/cleo_at.2021.am3r.1
https://doi.org/10.1364/cleo_at.2021.am3r.1
Autor:
Levon V. Asryan, John L. Monk
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXVIII.
The small-signal dynamic response of quantum dot (QD) lasers with asymmetric barrier layers (ABLs) is studied. The modulation bandwidth of this novel type of laser is shown to have a maximum as a function of the dc component of the pump current and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2266d1bde75723d27dc1bdba855bfc6e
https://doi.org/10.1117/12.2544019
https://doi.org/10.1117/12.2544019
Publikováno v:
Novel In-Plane Semiconductor Lasers XIX.
The temperature behavior of operating characteristics in semiconductor lasers with a quantum-confined active region is studied with a proper account for (i) non-instantaneous capture of charge carriers from the waveguide region into the active region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f5d4747c88121de954088e5f1d83d9
https://doi.org/10.1117/12.2546974
https://doi.org/10.1117/12.2546974
Autor:
F. I. Zubov, M. E. Muretova, Mikhail V. Maximov, V. V. Korenev, Levon V. Asryan, A. V. Savelyev, A. E. Zhukov, Elizaveta Semenova
Publikováno v:
Semiconductors. 52:1905-1908
A search for materials suitable for implementation of 1.55 µm Al-free diode lasers based on InP with asymmetric barrier (AB) layers is conducted. It is shown that a very high (over 106) suppression ratio of the parasitic electron flux can be achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5185323c1a59a89bb9791ae5cf50f5fc
https://doi.org/10.1134/s1063782618140336
https://doi.org/10.1134/s1063782618140336
Autor:
M. E. Muretova, F. I. Zubov, Eduard Moiseev, Mikhail V. Maximov, A. E. Zhukov, Levon V. Asryan, Yu. S. BalezinaPolubavkina, N. V. Kryzhanovskaya
Publikováno v:
Semiconductors. 52:1621-1629
A self-consistent model for calculating the threshold and high-power characteristics of semiconductor quantum well lasers with asymmetric barrier layers is developed. The model, which is based on a system of rate equations, uses the universal conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39f43acedf3fa01ce9fc5f165238d0bf
https://doi.org/10.1134/s1063782618120059
https://doi.org/10.1134/s1063782618120059