Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Levi Gant"'
Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry
Publikováno v:
Materials Science Forum. 924:697-702
This paper presents the performance, reliability and ruggedness characterization of 1200V, 80mΩ rated SiC planar gate MOSFETs, fabricated in a high volume, 150mm silicon CMOS foundry. The devices showed a specific on-resistance of 5.1 mΩ.cm2 at roo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b594e7756a800a00b93b113c08e42444
https://doi.org/10.4028/www.scientific.net/msf.924.697
https://doi.org/10.4028/www.scientific.net/msf.924.697
Publikováno v:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
Data centers are increasing in number and size at astounding rates, while operational cost, thermal management, size, and performance continue to be the driving metrics for the power subsystems in the associated computing equipment. This paper presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d85f811f5d8c8dd4652ae10f1f36ca
https://doi.org/10.1109/apec.2018.8341336
https://doi.org/10.1109/apec.2018.8341336
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper introduces an In-Circuit Reliability Test System (ICRTS) for SiC MOSFETs and diodes that can test a large number of high-voltage devices by emulating real life voltage and current stress to get statistical endurance test results. One chall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b81393743e3869a5cb1ce7cdde3f1eaa
https://doi.org/10.1109/apec.2017.7931018
https://doi.org/10.1109/apec.2017.7931018
Publikováno v:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe26416f25ad2056c907a4ac1df77ba
https://doi.org/10.1109/wipda.2016.7799929
https://doi.org/10.1109/wipda.2016.7799929
Publikováno v:
2015 IEEE Electric Ship Technologies Symposium (ESTS).
Protection from over-current situations and the resulting risk of device failure is a requirement when testing limited-run, experimental modules. This paper demonstrates a fast, configurable, and consistent means for protecting against over-current c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc7966afdcfaf45e3c94a0907c104df
https://doi.org/10.1109/ests.2015.7157914
https://doi.org/10.1109/ests.2015.7157914
Autor:
Gant, Levi1 lgant@littelfuse.com, Xuning Zhang2 xzhang@monolithsemi.com
Publikováno v:
EE: Evaluation Engineering. Aug2018, Vol. 57 Issue 8, p20-24. 5p.
Autor:
Burks, Joshua D., Gant, Katie L., Guest, James D., Jamshidi, Aria G., Cox, Efrem M., Anderson, Kim D., Dietrich, W. Dalton, Bunge, Mary Bartlett, Green, Barth A., Khan, Aisha, Pearse, Damien D., Saraf-Lavi, Efrat, Levi, Allan D.
Publikováno v:
Neurosurgical Focus; Mar2019, Vol. 46 Issue 3, p1-6, 6p
Publikováno v:
2015 IEEE Electric Ship Technologies Symposium (ESTS); 2015, p1-6, 6p
Autor:
Robert Stahlbush, Philip G. Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars J. Lelis
ICSCRM 2017Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA
Autor:
van den Hout
This is the first commentary on the letters of Marcus Cornelius Fronto (c. 90-95 - c. 167). It aims at an extensive grammatical, stylistic and historical interpretation of the letters and the ancient testimonies on Fronto. The author demonstrates whe