Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Levi D. Barnes"'
Publikováno v:
SPIE Proceedings.
The steady march of Moore's law demands ever smaller feature sizes to be printed and Optical Proximity Correction to correct to ever tighter dimensional tolerances. Recently pitch doubling techniques has relieved the pressure on CD reduction, which i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8596c7d09a8d28db56f4e7eb2d79fe3
https://doi.org/10.1117/12.867247
https://doi.org/10.1117/12.867247
Autor:
Alex Miloslavsky, Myung-Soo Noh, Christopher Cork, Beom-Seok Seo, Kevin Lucas, Levi D. Barnes, Suk-Joo Lee
Publikováno v:
SPIE Proceedings.
In double-patterning technology (DPT), we study the complex interactions of layout creation, physical design and design rule checking flows for the 22nm and 16nm device nodes. Decomposition includes the cutting (splitting) of original design-intent f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7134c6eb3f00a8d2d1c0da7304e66036
https://doi.org/10.1117/12.848194
https://doi.org/10.1117/12.848194
Publikováno v:
SPIE Proceedings.
Decomposition of an input pattern in preparation for a double patterning process is an inherently global problem in which the influence of a local decomposition decision can be felt across an entire pattern. In spite of this, a large portion of the w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d31522867faeeb939c12bbd9ad3fa974
https://doi.org/10.1117/12.831396
https://doi.org/10.1117/12.831396
Publikováno v:
SPIE Proceedings.
A challenge in model-based assist feature placement is to find optimal placements while satisfying mask rules and preventing AF printing. There are numerous strategies for achieving this ranging from fully rule-based methods to pixel-based inversion.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c1c1192e6173f2e88d954022545da1
https://doi.org/10.1117/12.815171
https://doi.org/10.1117/12.815171
Publikováno v:
SPIE Proceedings.
Double patterning technology (DPT) is one of the main options for printing critical layers at 32nm half-pitch and beyond. To enable DPT, a layout decomposition tool is first used to split the original design into two separate decomposed-design layout
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::122c23b33bf47ce9c67f88cd14314c9a
https://doi.org/10.1117/12.815175
https://doi.org/10.1117/12.815175
Publikováno v:
SPIE Proceedings.
Double Patterning is seen as the prime technology to keep Moores law on path while EUV technology is still maturing into production worthiness. As previously seen for alternating-Phase Shift Mask technology[1], layout compliance of double patternin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff11c5e26fa324c47f66d19247c6875
https://doi.org/10.1117/12.815213
https://doi.org/10.1117/12.815213
Publikováno v:
Photomask Technology 2008.
Some embodiments provide techniques and systems to identify locations in a target mask layout for placing assist features. During operation, an embodiment can determine a spatial sampling frequency to sample the target mask layout, wherein sampling t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d550ce239d7ccadbec9268d69edc99f9
https://doi.org/10.1117/12.801539
https://doi.org/10.1117/12.801539
Publikováno v:
Photomask Technology 2008.
Double patterning has gained prominence as the most likely lithographic methodology to help keep Moore's law going towards 32nm 1/2 pitch lithography. While solutions, to date, have focused mainly on gap splitting to avoid minimum spacing violations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee1f15a21b8a0f8fdc0cd401d75ec69
https://doi.org/10.1117/12.801562
https://doi.org/10.1117/12.801562
Autor:
Joo-Tae Moon, Kyoil Koo, Woo-Sung Han, Sung-Gon Jung, Sung-Woon Choi, Young-Chang Kim, Suk-Joo Lee, Xiaohai Li, Sooryong Lee, Frank Amoroso, Sang-Wook Kim, Benjamin D. Painter, Levi D. Barnes, Munhoe Do, Sungsoo Suh, Robert Lugg
Publikováno v:
SPIE Proceedings.
Due to shrinking design nodes and to some limitations of scanners, extreme off-axis illumination (OAI) required and its use and implementation of assist features (AF) to solve depth of focus (DOF) problems for isolated features and specific pitch reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582c0a986196140b8a703f18d96d1d88
https://doi.org/10.1117/12.793040
https://doi.org/10.1117/12.793040
Publikováno v:
SPIE Proceedings.
Double patterning has gained prominence as the most likely methodology to help keep Moore's law going towards 22nm 1/2 pitch lithography. However, most designs cannot be blindly shrunk to run using only two patterning layers and a variety of constrai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ac05370befb83af2f916bb57f1697e
https://doi.org/10.1117/12.793116
https://doi.org/10.1117/12.793116