Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Lev A. Seidman"'
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 2, Pp 63-71 (2021)
The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional he
Externí odkaz:
https://doaj.org/article/69a7427afc664f4f8b01da72c984ae42
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 3, Pp 117-121 (2017)
The aim of this work is to study the possibility of reducing the labor consumption and cost of high-power silicon transistor manufacturing without compromise in transistor low thermal resistance. To this end we experimentally explored replacing Au-Si
Externí odkaz:
https://doaj.org/article/0e6c2389f899411b84bb2df817df4532
Autor:
Kirill D. Vanyukhin, Roman V. Zakharchenko, Nikolay I. Kargin, Mikhail V. Pashkov, Lev A. Seidman
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 2, Pp 54-59 (2016)
Ti/Al/Ni/Au metallization widely used in the technology of GaN base devices have a very important imperfection i.e. rough surface. There are different opinions about the causes of this imperfection: balling-up of molten aluminum or the appearance of
Externí odkaz:
https://doaj.org/article/25cdd05d7561409cbf7df09441766c6a
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 3, Pp 117-121 (2017)
The aim of this work is to study the possibility of reducing the labor consumption and cost of high-power silicon transistor manufacturing without compromise in transistor low thermal resistance. To this end we experimentally explored replacing Au-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a72223495ed284c74fe86bdb102c48f5
https://doi.org/10.1016/j.moem.2017.10.004
https://doi.org/10.1016/j.moem.2017.10.004
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 2, Pp 54-59 (2016)
Ti/Al/Ni/Au metallization widely used in the technology of GaN base devices have a very important imperfection i.e. rough surface. There are different opinions about the causes of this imperfection: balling-up of molten aluminum or the appearance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dcae902e4c25ad1b9eaacc264a519c08
Publikováno v:
Russian Microelectronics. 44:564-568
The Ti/Al/Ni/Au multilayer metallization system is widespread in the technology of n-GaN-based devices. Herein, the mechanisms of the formation of the surface roughness of the Ti/Al/Ni/Au metallization (with 300 nm hillocks) upon annealing in a nitro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b51f27e69c55bc6c45f7be438ff0bb7e
https://doi.org/10.1134/s1063739715080132
https://doi.org/10.1134/s1063739715080132
Publikováno v:
Russian Microelectronics. 43:569-574
This paper studies the properties of ITO films obtained by electron beam evaporation in a wide range of conditions: oxygen pressure from 5 × 10−4 to 4 × 10−2 Pa and the evaporation rate of 0.075–0.4 nm/s. Evaporation was carried out from gran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8ec674de1b0ba49038835854c86b4e
https://doi.org/10.1134/s1063739714080137
https://doi.org/10.1134/s1063739714080137
Publikováno v:
Russian Microelectronics. 42:483-487
Nanosized Ti, Al, Ni, Cr, and Au films were deposited onto KEF-20 (100)-oriented silicon plates with a diameter of 100 mm using the method of thermal evaporation in a vacuum. The value and uniformity of the distribution of the specific electrical res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40bf5e8232039187c7b1d3c2dbae0161
https://doi.org/10.1134/s1063739713080143
https://doi.org/10.1134/s1063739713080143