Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Leturcq, Renaud"'
Autor:
Ramírez, Omar, Lanzoni, Evandro Martin, Poeira, Ricardo G., Weiss, Thomas P., Leturcq, Renaud, Redinger, Alex, Siebentritt, Susanne
Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor,
Externí odkaz:
http://arxiv.org/abs/2204.12973
Autor:
Sood, Mohit, Gnanasambandan, Poorani, Adeleye, Damilola, Shukla, Sudhanshu, Adjeroud, Noureddine, Leturcq, Renaud, Siebentritt, Susanne
Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitution of CdS by an a
Externí odkaz:
http://arxiv.org/abs/2202.10708
Autor:
Chatzigiannakis, Georgios, Jaros, Angelina, Leturcq, Renaud, Jungclaus, Jorgen, Voss, Tobias, Gardelis, Spiros, Kandyla, Maria
Publikováno v:
Journal of Alloys and Compounds 903 (2022) 163836
An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visi
Externí odkaz:
http://arxiv.org/abs/2202.04734
Autor:
Chatzigiannakis, Georgios, Jaros, Angelina, Leturcq, Renaud, Jungclaus, Jörgen, Voss, Tobias, Gardelis, Spyros, Kandyla, Maria
Publikováno v:
ACS Applied Electronic Materials 2, 2819-2828, 2020
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p
Externí odkaz:
http://arxiv.org/abs/2010.01586
Publikováno v:
Sens. Act. B 297, 126602 (2019)
Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the
Externí odkaz:
http://arxiv.org/abs/1904.04591
The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main pos
Externí odkaz:
http://arxiv.org/abs/1901.02259
Akademický článek
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Akademický článek
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Publikováno v:
In Journal of Crystal Growth 15 September 2021 570
Autor:
Gustavsson, Simon, Rudner, Mark S., Levitov, Leonid S., Leturcq, Renaud, Studer, Matthias, Ihn, Thomas, Ensslin, Klaus
Publikováno v:
Phys. Rev. B 89, 115304 (2014)
Semiconductor quantum dots driven by the broadband radiation fields of nearby quantum point contacts provide an exciting new setting for probing dynamics in driven quantum systems at the nanoscale. We report on real-time charge-sensing measurements o
Externí odkaz:
http://arxiv.org/abs/1403.3340