Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Letellier, Juliette"'
Publikováno v:
IEEE Electron Device Letters, 2024, pp.1-1.
This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to an interd
Externí odkaz:
http://arxiv.org/abs/2409.03293
Autor:
Couret, Marine, Michez, Damien, Letellier, Juliette, Castelan, Anne, Pernot, Julien, Rouger, Nicolas
Publikováno v:
In Diamond & Related Materials May 2023 135
Autor:
Michez, Damien, Couret, Marine, Letellier, Juliette, Driche, Khaled, Pernot, Julien, Rouger, Nicolas
Publikováno v:
Hasselt Diamond Workshop 2023-SBDD XXVII
Hasselt Diamond Workshop 2023-SBDD XXVII, Mar 2023, Hasselt, Belgium
Hasselt Diamond Workshop 2023-SBDD XXVII, Mar 2023, Hasselt, Belgium
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3379::03a55ecb147ae16bd5d1fb2cc7bc4048
https://hal.science/hal-04099969
https://hal.science/hal-04099969
Autor:
Couret, Marine, Rouger, Nicolas, Driche, Khaled, Letellier, Juliette, Castelan, Anne, Pernot, Julien
Publikováno v:
MRS Spring 2022-Symposium EQ01-Ultra-Wide Bandgap Materials and Devices
MRS Spring 2022-Symposium EQ01-Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu, United States
MRS Spring 2022-Symposium EQ01-Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu, United States
International audience; In the context of power semiconductor devices, ultra wide bandgap (UWBG) materials offer increased critical electric fields compared to wide-bandgap (WBG) materials [1]. It is the case of monocrystalline diamond which exhibits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3379::53842491dd53c778d685688fe8ffd715
https://hal.science/hal-03692802
https://hal.science/hal-03692802
Autor:
Couret, Marine, Castelan, Anne, Letellier, Juliette, Driche, Khaled, Pernot, Julien, Rouger, Nicolas
Publikováno v:
26th Hasselt Diamond Workshop-SBDD XXVI
26th Hasselt Diamond Workshop-SBDD XXVI, Mar 2022, Hasselt, Belgium
26th Hasselt Diamond Workshop-SBDD XXVI, Mar 2022, Hasselt, Belgium
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3379::b379309cf3cc528ccd70a78553b4d651
https://hal.science/hal-03647967
https://hal.science/hal-03647967
Autor:
Letellier, Juliette
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2019. English. ⟨NNT : 2019GREAT073⟩
Diamond is known as the best candidate for power electronics application. Currently the most advance component is the Schottky diode. This device still is already showing promising results but some improvement are still needed. In this thesis, some o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b389b9e8747d19c79d4dd07033941577
https://tel.archives-ouvertes.fr/tel-02929023
https://tel.archives-ouvertes.fr/tel-02929023
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
International audience; A diamond MOSFET has been fabricated and characterized up to 250°C. The fabrication process has been improved in order to significantly reduce the specific on resistance, down to 50 mΩ.cm², and the gate leakage current at h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8dff557b58b2340a2a1d5db1d8c4f1df
https://hal.archives-ouvertes.fr/hal-02377367/document
https://hal.archives-ouvertes.fr/hal-02377367/document
Autor:
Perez, Gaetan, Letellier, Juliette, Maréchal, Aurélien, Eon, David, Chicot, Gauthier, Jeannin, Pierre-Olivier, Rouger, Nicolas
Publikováno v:
Symposium de Génie Electrique
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
International audience; Cet article présente l’intégration de diodes Schottky en diamant dans des applications d’électronique de puissance et les problématiques liées à leur mise en œuvre. Différentes approches sont étudiées dans le but
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ebee5e5bb27c86af1f4f4c5315371c4a
https://hal.archives-ouvertes.fr/hal-02981846/file/articlefinal_SGE_2018_Diodes_Diamant.pdf
https://hal.archives-ouvertes.fr/hal-02981846/file/articlefinal_SGE_2018_Diodes_Diamant.pdf