Zobrazeno 1 - 10
of 201
pro vyhledávání: '"Lester F. Eastman"'
Autor:
Lester F. Eastman, Walid A. Hadi, B. E. Foutz, Poppy Siddiqua, Michael Shur, Stephen K. O’Leary
Publikováno v:
Springer Handbook of Electronic and Photonic Materials ISBN: 9783319489315
The III-V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have been recognized as promising materials for novel electronic and optoelectronic device applications for some time now. Since informed device design requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdc48b7b3fb2ff0ab1d139ce4c36f516
https://doi.org/10.1007/978-3-319-48933-9_32
https://doi.org/10.1007/978-3-319-48933-9_32
Autor:
Lester F. Eastman, Barbaros Aslan
Publikováno v:
Solid-State Electronics. 64:57-62
A planar and ultra-short gallium nitride (GaN) diode structure is investigated as a potential Terahertz (THz) range negative differential resistance (NDR) diode. An empirical velocity-field relation, exhibiting a peak electron velocity as high as 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af124ecd5f0c85359edec07a4812d147
https://doi.org/10.1016/j.sse.2011.06.044
https://doi.org/10.1016/j.sse.2011.06.044
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:417-422
We have found that Scandium metal is near ohmic as deposited on GaN , but when it is annealed at high temperatures a large barrier height Schottky forms. In this study we used Sc - Au contacts to form Schottky barrier diodes on AlGaN / GaN HEMT mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2edc74346b7164755ac592436ee865d3
https://doi.org/10.1142/s0129156411006702
https://doi.org/10.1142/s0129156411006702
Publikováno v:
Solid State Communications. 151:874-878
We study the sensitivity of the steady-state electron transport that occurs within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient. An ensemble semi-classical three-valley Monte Carlo simulation approach is used for the pur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fd52f2100fb05fa23b8e729cacbceda
https://doi.org/10.1016/j.ssc.2011.04.004
https://doi.org/10.1016/j.ssc.2011.04.004
Publikováno v:
Solid State Communications. 150:2182-2185
We study the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide using an ensemble semi-classical three-valley Monte Carlo simulation approach. We find that for electric field strengths in excess of 180 kV/cm, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc2882424daa61286c4b3a8ae0c1ab2
https://doi.org/10.1016/j.ssc.2010.08.033
https://doi.org/10.1016/j.ssc.2010.08.033
Autor:
Hyungtak Kim, Lester F. Eastman
Publikováno v:
Journal of the Korean Physical Society. 55:666-670
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4be2883a9796f8589535f48ee9257e8
https://doi.org/10.3938/jkps.55.666
https://doi.org/10.3938/jkps.55.666
Publikováno v:
Journal of Materials Science: Materials in Electronics. 21:218-230
Using a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk wurtzite InN using a revised set of material parameters, this revised set of parameters taking i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d952e374e8708d7321ff37811b34c6
https://doi.org/10.1007/s10854-009-9896-1
https://doi.org/10.1007/s10854-009-9896-1
Publikováno v:
International Journal of High Speed Electronics and Systems. 19:1-6
A GaN based negative differential conductivity diode utilizing transient ballistic transport effects is proposed and large-signal circuit simulations along with preliminary experimental results are presented. The diode is an n +- n - n + structure an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f6ca15c473540682fc41978cbcfcd8
https://doi.org/10.1142/s0129156409006035
https://doi.org/10.1142/s0129156409006035
Autor:
Hai Lu, Lester F. Eastman, K. D. Matthews, Clara Ji-Hyun Cho, William J. Schaff, Troy Richards, D. Hao, Ho-Young Cha, Xiaodong Chen
Publikováno v:
physica status solidi (b). 245:868-872
The electrical properties of InGaN that is either undoped, or Mg doped, are compared to learn about the nature of p-type conductivity. For In alloy fraction beyond 5% Hall measurements do not indicate p-type polarity, even when Mg doping is employed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c72b53f5c187510808cfdcb1cb6d44
https://doi.org/10.1002/pssb.200778710
https://doi.org/10.1002/pssb.200778710
Publikováno v:
International Journal of High Speed Electronics and Systems. 17:97-101
During InGaN Molecular Beam Epitaxy (MBE) growth, the material surface is exposed to a small diameter pulse laser beam that is controlled by scanning mirrors. Local heating effects are observed at the points of exposure. The materials are characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad2b17cdc0b5f745b679d59763f82b31
https://doi.org/10.1142/s0129156407004291
https://doi.org/10.1142/s0129156407004291