Zobrazeno 1 - 10
of 303
pro vyhledávání: '"Lesnikov, V. P."'
Autor:
Kudrin, A. V., Lesnikov, V. P., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Demina, P. B., Pavlov, D. A., Usov, Yu. V., Milin, V. E., Kuznetsov, Yu. M., Kriukov, R. N., Konakov, A. A., Tabachkova, N. Yu.
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM
Externí odkaz:
http://arxiv.org/abs/1911.00327
Autor:
Kudrin, A. V., Lesnikov, V. P., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Antonov, I. N., Kriukov, R. N., Zubkov, S. Yu., Nikolichev, D. E., Konakov, A. A., Dudin, Yu. A., Kuznetsov, Yu. M., Sobolev, N. A., Temiryazeva, M. P.
The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. I
Externí odkaz:
http://arxiv.org/abs/1902.03465
Autor:
Kudrin, A. V., Lesnikov, V. P., Pavlov, D. A., Usov, Yu. V., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, O. V., Milin, B. E., Kriukov, R. N., Sobolev, N. A., Trushin, V. N.
Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb
Externí odkaz:
http://arxiv.org/abs/1810.13271
Autor:
Dorokhin, M. V., Kuznetsov, Yu. M., Lesnikov, V. P., Kudrin, A. V., Erofeeva, I. V., Boryakov, A. V., Kryukov, R. N., Nikolitchev, D. E., Zubkov, S. Yu., Trushin, V. N., Demina, P. B.
Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperature magnetic properties of the films were investigated. It was demonstra
Externí odkaz:
http://arxiv.org/abs/1805.02904
Autor:
Kudrin, A. V., Danilov, Yu. A., Lesnikov, V. P., Vikhrova, O. V., Pavlov, D. A., Usov, Yu. V., Antonov, I. N., Krukov, R. N., Sobolev, N. A.
The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The
Externí odkaz:
http://arxiv.org/abs/1705.09318
Autor:
Lesnikov, V. P.1 lesnikov@op.edu.ua
Publikováno v:
Journal of Physical Studies. 2023, Vol. 27 Issue 2, p1-5. 5p.
Autor:
Lesnikov, V. P.1 lesnikov@op.edu.ua
Publikováno v:
Journal of Physical Studies. 2022, Vol. 26 Issue 3, p3003-1-3003-12. 12p.
Autor:
Aronzon, B. A., Rylkov, V. V., Nikolaev, S. N., Tugushev, V. V., Caprara, S., Podolskii, V. V., Lesnikov, V. P., Lashkul, A., Laiho, R., Gareev, R. R., Perov, N. S., Semisalova, A. S.
A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE
Externí odkaz:
http://arxiv.org/abs/1012.1172
Autor:
Aronzon, B. A., Rylkov, V. V., Nikolaev, S. N., Tugushev, V. V., Caprara, S., Podolskii, V. V., Lesnikov, V. P., Lashkul, A., Laiho, R., Gareev, R. R., Perov, N. S., Semisalova, A. S.
A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consi
Externí odkaz:
http://arxiv.org/abs/1012.0715
Autor:
Rylkov, V. V., Lagutin, A. S., Aronzon, B. A., Podolskii, V. V., Lesnikov, V. P., Goiran, M., Galibert, J., Raquet, B., Leotin, J.
Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type be
Externí odkaz:
http://arxiv.org/abs/cond-mat/0612641