Zobrazeno 1 - 10
of 465
pro vyhledávání: '"Leskela¨, M."'
Autor:
Ossorio, Ó.G., Vinuesa, G., García, H., Sahelices, B., Dueñas, S., Castán, H., Ritala, M., Leskelaˇ, M., Kemell, M., Kukli, K.
Publikováno v:
In Solid State Electronics December 2021 186
Autor:
Pankratova, O.Yu. *, Stepanova, J.S., Zvinchuk, R.A., Suvorov, A.V., Hatanpaa, T., Kozlov, V., Leskela, M.
Publikováno v:
In Thermochimica Acta 2005 428(1):91-94
Publikováno v:
Journal of Applied Physics; 11/1/2001, Vol. 90 Issue 9, p4532, 11p, 1 Chart, 11 Graphs
Publikováno v:
Journal of Applied Physics; 7/1/1998, Vol. 84 Issue 1, p641, 7p, 3 Diagrams, 7 Graphs
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Kukli, K., Kemeli, M., Puukilainen, E., Aarik, J., Aidla, A., Sjavaara, T., Laitinen, M., Tallarida, M., Sundqvist, J., Ritala, M., Leskela, M.
Ru films were grown by atomic layer deposition in the temperature range of 275-350°C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO2, ZrO2, and TiN substrates. Conformal growth was examined on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::6e92aee3744ceaf736a57ef792697e5c
https://publica.fraunhofer.de/handle/publica/224337
https://publica.fraunhofer.de/handle/publica/224337
This paper reviews several high-k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, includ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::92d82093aea28b257c23844273767a03
https://publica.fraunhofer.de/handle/publica/218511
https://publica.fraunhofer.de/handle/publica/218511
Autor:
Niinistö, J, Kukli, K., Sajavaara, T., Ritala, M., Leskela, M., Oberbeck, L., Sundqvist, J., Schröder, U.
Yttrium-doped HfO2 films were grown by atomic layer deposition via alternating HfO2 and Y2O3 growth cycles. Precursors used were (CpMe)(2)Hf(OMe)Me or Hf(NEtMe)(4) and (CpMe)(3)Y together with ozone. The 5-8 nm thick HfO2:Y films were amorphous in as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::83c90c7c479a1dca81396bbf2a5d8e6e
https://publica.fraunhofer.de/handle/publica/218046
https://publica.fraunhofer.de/handle/publica/218046
Publikováno v:
Chemistry of Materials 20(2008)15, 5023-5028
Magnesium fluoride is one of the most important optical thin film materials due to the good light transparency down to the vacuum ultraviolet (UV) range. A novel atomic layer deposition (ALD) process was developed for depositing MgF2 thin films. Inst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::9442d1692e02d16abfc2313592932249
https://www.hzdr.de/publications/Publ-12423-1
https://www.hzdr.de/publications/Publ-12423-1
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.