Výsledky vyhledávání - "Lescaut, B."

Conference

Passivation of InP-based HBTs for high bit rate circuit applications.

Autor: Caffin, D., Bricard, L., Courant, J.L., How Kee Chun, L.S., Lescaut, B., Duchenois, A.M., Meghelli, M., Benchimol, J.L., Launay, P.

Publikováno v: Conference Proceedings 1997 International Conference on Indium Phosphide & Related Materials; 1997, p637-640, 4p

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Conference

Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma.

Autor: Lescaut, B., Nissim, Y.I., Bresse, J.F.

Publikováno v: Proceedings of 8th International Conference on Indium Phosphide & Related Materials; 1996, p319-322, 4p

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Conference

Cubic phase gallium nitride epitaxially formed on GaAs or GaInAs at low temperature with a NH3 DECR plasma.

Autor: Nissim, Y.I., Lescaut, B., Leprince, L., Patriarche, G., Bresse, J.F.

Publikováno v: Conference Proceedings 1997 International Conference on Indium Phosphide & Related Materials; 1997, p96-98, 3p

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Periodical

SiON large area deposition with a deep-UV flash argon/krypton lamp array

Autor: Flicstein, J., Mba, J., Lescaut, B., Vitel, Y., Ossart, P., Licoppe, C.

Publikováno v: Applied Surface Science; 1996, Vol. 106 Issue: 1 p44-50, 7p

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