Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Leopold Palmetshofer"'
Autor:
Leopold Palmetshofer
Publikováno v:
Surface and Thin Film Analysis: A Compendium of Principles, Instrumentation, and Applications, Second Edition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5437bb66476e2699a5c849eaf801572a
https://doi.org/10.1002/9783527636921.ch11
https://doi.org/10.1002/9783527636921.ch11
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 255:105-109
The size of collision cascades of heavy ions in silicon as calculated by molecular dynamics or other simulation methods is considerably larger than the size of the amorphous pockets observed by transmission electron microscopy (TEM). Using multislice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43d0edc05761db3695fd5085d33c58e5
https://doi.org/10.1016/j.nimb.2006.11.020
https://doi.org/10.1016/j.nimb.2006.11.020
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253:227-231
Ion-beam-induced interfacial amorphization (IBIIA) of Si, i.e. the growth of an existing amorphous layer upon ion bombardment, has previously been demonstrated for high-energy (MeV) heavy ions. Using transmission electron microscopy we show that IBII
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::754ce54c1e704dc0c128d1be92ea6a20
https://doi.org/10.1016/j.nimb.2006.10.031
https://doi.org/10.1016/j.nimb.2006.10.031
Publikováno v:
Applied Surface Science. 252:271-277
In the last decade ion implantation of common dopants in silicon has been almost full characterised. However, data of inner transition elements are based on few measurements or even extrapolations. Our investigations focus on erbium, an upcoming dopa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f6148e4ffac7f1ed3a3850b475c423e
https://doi.org/10.1016/j.apsusc.2005.02.019
https://doi.org/10.1016/j.apsusc.2005.02.019
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 228:360-363
Coupled binary collision and kinetic lattice Monte Carlo simulations are used to analyze 30 keV B channeling profile measurements of damage from 30 keV N implants in (1 1 0)-Si. Collision cascades are generated in the binary collision approach, while
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af5ffaae919da1acf11e4dd4e86e336e
https://doi.org/10.1016/j.nimb.2004.10.070
https://doi.org/10.1016/j.nimb.2004.10.070
Autor:
Maja Müller, Jarmila Cervena, Lewis T. Chadderton, Leopold Palmetshofer, V. Hnatowicz, J. Vacik, R. Klett, D. Fink, Alexander Petrov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 191:662-668
The penetration of aqueous 6Li+ markers into low energy ion irradiated polyimide (PI) foils was examined by the neutron depth profiling technique in combination with a modified tomographic approach. The ion irradiation always leads to an enhancement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d0b3a277104ef87258bf51335f831e9
https://doi.org/10.1016/s0168-583x(02)00629-8
https://doi.org/10.1016/s0168-583x(02)00629-8
Publikováno v:
Physica B: Condensed Matter. :344-347
The only way to obtain room temperature electroluminescence at 1.54 μm from Si diodes due to intra-atomic transitions of erbium is the excitation of SiO 2 : Er clusters by hot electron injected in a reverse biased diode. Impact excitation of erbium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf27ec21ce17157a40f5932e21f2aba
https://doi.org/10.1016/s0921-4526(01)00695-0
https://doi.org/10.1016/s0921-4526(01)00695-0
Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy
Autor:
M. V. Stepikhova, H. Ellmer, D. V. Shengurov, V. G. Shengurov, G. A. Maksimov, Boris A. Andreev, S. P. Svetlov, V. Yu. Chalkov, Z. F. Krasilnik, Leopold Palmetshofer
Publikováno v:
Semiconductors. 35:918-923
Epitaxial silicon layers codoped with erbium and oxygen were grown by molecular-beam epitaxy using a silicon sublimation source. For growing the erbium-doped silicon layers, two types of impurity sources were used: (i) erbium-doped silicon plates wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dec8236ab8e34c3b01a4c05957388e0
https://doi.org/10.1134/1.1393027
https://doi.org/10.1134/1.1393027
Publikováno v:
Materials Science and Engineering: B. 81:86-90
Depending on the doping and annealing conditions, as well as the oxygen content, erbium produces a big variety of different centres in silicon. These centres can be distinguished by their fine structure patterns seen both in luminescence and in excit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb63c5f532c79ed567a6c7b6592bae7
https://doi.org/10.1016/s0921-5107(00)00743-1
https://doi.org/10.1016/s0921-5107(00)00743-1
Publikováno v:
Microchimica Acta. 135:105-111
The distribution of the relevant elements within TiN coatings, made with two different physical deposition methods as the conventional dc vacuum arc method and the filtered high current pulsed arc method (-HCA) are characterized and finally compared.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6528bff74cae1ee8e5fc257a9ac50cf
https://doi.org/10.1007/s006040070025
https://doi.org/10.1007/s006040070025