Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Leonidas Mouchliadis"'
Autor:
George Kourmoulakis, Sotiris Psilodimitrakopoulos, George Miltos Maragkakis, Leonidas Mouchliadis, Antonios Michail, Joseph A. Christodoulides, Manoj Tripathi, Alan B. Dalton, John Parthenios, Konstantinos Papagelis, Emmanuel Stratakis, George Kioseoglou
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. GRMs exhibit distinct properties under the influence of the substrate that serves as support through uneven compression/ el
Externí odkaz:
https://doaj.org/article/e2fbbdf32fef4da1bba6808124274490
Autor:
Leonidas Mouchliadis, Sotiris Psilodimitrakopoulos, George Miltos Maragkakis, Ioanna Demeridou, George Kourmoulakis, Andreas Lemonis, George Kioseoglou, Emmanuel Stratakis
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
Abstract Degenerate minima in momentum space—valleys—provide an additional degree of freedom that can be used for information transport and storage. Notably, such minima naturally exist in the band structure of transition metal dichalcogenides (T
Externí odkaz:
https://doaj.org/article/4c98b1d705af4efa89142e86d6ef4a0e
Autor:
Ioanna Demeridou, Emmanouil G Mavrotsoupakis, Leonidas Mouchliadis, Pavlos G Savvidis, Emmanuel Stratakis, George Kioseoglou
Publikováno v:
2D Materials. 10:025023
Transition metal dichalcogenide (TMD) monolayers (1L) in the 2H-phase are two-dimensional semiconductors with two valleys in their band structure that can be selectively populated using circularly polarized light. The choice of the substrate for mono
Autor:
Emmanuel Stratakis, George Miltos Maragkakis, Nicolas Gauquelin, Jo Verbeeck, Daen Jannis, Andrey S. Orekhov, George Kioseoglou, Sotiris Psilodimitrakopoulos, George Kourmoulakis, Leonidas Mouchliadis
Publikováno v:
npj 2D Materials and Applications
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two mono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19f9eea92cb69335c62131a865eb57e1
https://zenodo.org/record/7979685
https://zenodo.org/record/7979685
Autor:
Sotiris Psilodimitrakopoulos, Andreas Lemonis, Leonidas Mouchliadis, George Miltos Maragkakis, Emmanuel Stratakis, George Kioseoglou, Ioannis Paradisanos
Publikováno v:
Opto-Electronic Advances, Vol 2, Iss 11, Pp 190026-1-190026-8 (2019)
We use laser-scanning nonlinear imaging microscopy in atomically thin transition metal dichalcogenides (TMDs) to reveal information on the crystalline orientation distribution, within the 2D lattice. In particular, we perform polarization-resolved se
Autor:
George Miltos Maragkakis, Ioanna Demeridou, Sotiris Psilodimitrakopoulos, George Kourmoulakis, George Kioseoglou, Andreas Lemonis, Leonidas Mouchliadis, Emmanuel Stratakis
Publikováno v:
npj 2D Materials and Applications
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
Degenerate minima in momentum space - valleys - provide an additional degree of freedom that can be used for information transport and storage. Notably, such minima naturally exist in the band structure of transition metal dichalcogenides (TMDs). Whe
Autor:
George Miltos Maragkakis, Sotiris Psilodimitrakopoulos, Leonidas Mouchliadis, Abdus Salam Sarkar, Andreas Lemonis, George Kioseoglou, Emmanuel Stratakis
Publikováno v:
Advanced Optical Materials. 10:2270038
Publikováno v:
Physical Review B 101 (2020). doi:10.1103/PhysRevB.101.075207
info:cnr-pdr/source/autori:Tsibidis G.D.; Mouchliadis L.; Pedio M.; Stratakis E./titolo:Modeling ultrafast out-of-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal silicon carbide with femtosecond laser pulses/doi:10.1103%2FPhysRevB.101.075207/rivista:Physical Review B/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:101
Physical Review B
info:cnr-pdr/source/autori:Tsibidis G.D.; Mouchliadis L.; Pedio M.; Stratakis E./titolo:Modeling ultrafast out-of-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal silicon carbide with femtosecond laser pulses/doi:10.1103%2FPhysRevB.101.075207/rivista:Physical Review B/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:101
Physical Review B
We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser induced out-of-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::055a86a7723b2d2e37d3b31919853039
https://publications.cnr.it/doc/425452
https://publications.cnr.it/doc/425452
Autor:
Sotiris, Psilodimitrakopoulos, Leonidas, Mouchliadis, Ioannis, Paradisanos, George, Kourmoulakis, Andreas, Lemonis, George, Kioseoglou, Emmanuel, Stratakis
Publikováno v:
Scientific Reports
Stacked atomically thin transition metal dichalcogenides (TMDs) exhibit fundamentally new physical properties compared to those of the individual layers. The twist angle between the layers plays a crucial role in tuning these properties. Having a too
Autor:
Sotiris Psilodimitrakopoulos, Andreas Lemonis, Leonidas Mouchliadis, George Kourmoulakis, Emmanuel Stratakis, Ioannis Paradisanos, George Kioseoglou
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-11 (2019)
Scientific Reports
Scientific Reports
Stacked atomically thin transition metal dichalcogenides (TMDs) exhibit fundamentally new physical properties compared to those of the individual layers. The twist angle between the layers plays a crucial role in tuning these properties. Having a too
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c21b143ca286bda7b557ad53b06d755c