Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Leonid V. Sokolov"'
Autor:
A. E. Dolbak, Vyacheslav Timofeev, M. Yu. Esin, Leonid V. Sokolov, O. P. Pchelyakov, A. I. Nikiforov, V. I. Mashanov, A. S. Deryabin
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:470-477
The results of investigating the generation of strained nanoheterostructures based on compounds with materials of group IV (Ge, Si, Sn) are presented. It is established how silver, tin, and lead atoms diffuse over the surface and what temperature dep
Publikováno v:
Physics of the Solid State. 61:145-148
In the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge
Autor:
Leonid V. Sokolov
Publikováno v:
Current Studies in Herpetology. 19:132-146
Publikováno v:
Journal of Crystal Growth. 483:265-268
Edge dislocations in face-centered crystals are formed from two mixed dislocations gliding along intersecting {1 −1 1} planes, forming the so-called Lomer locks. This process, which is called zipping, is energetically beneficial. It is experimental
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:677-679
The crystallography of a quadrangular contour confining dislocation etch pits in the plane of the surface of a film is investigated via the structural-sensitive etching of GeSi epitaxial films on Si(001) in combination with atomic force microscopy. D
Autor:
Leonid V. Sokolov, Arseny Tsvey
Publikováno v:
Biology Bulletin. 43:1148-1160
The question “Which factors govern the timing of migration in birds?” has fascinated researchers for a long time. It was initially assumed that avian migration is triggered by environmental factors, such as ambient temperature and food availabili
Publikováno v:
Technical Physics Letters. 44:916-918
Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is established that the density of TDs revealed in epitaxi
Autor:
Måns Karlsson, Åsa Steinholtz, Tara L. Crewe, Stuart A. Mackenzie, Martin Stervander, Ina Tirri, Andreas Lindén, Leonid V. Sokolov, Aleksi Lehikoinen, Rune Skjold Tjørnløv, Erica H. Dunn, Lennart Karlsson, Vidar Kristiansen, Arne Andersson, Jan Erik Røer, Steve Newman, Chris Sharpe, George Gregory
Publikováno v:
Lehikoinen, A, Lindén, A, Karlsson, M, Andersson, A, Crewe, T L, Dunn, E H, Gregory, G, Karlsson, L, Kristiansen, V, Mackenzie, S, Newman, S, Røer, J E, Sharpe, C, Sokolov, L V, Steinholtz, Å, Stervander, M, Tirri, I S & Tjørnløv, R S 2019, ' Phenology of the avian spring migratory passage in Europe and North America : Asymmetric advancement in time and increase in duration ', Ecological Indicators, vol. 101, no. June, pp. 985-991 . https://doi.org/10.1016/j.ecolind.2019.01.083
Climate change has been shown to shift the seasonal timing (i.e. phenology) and distribution of species. The phenological effects of climate change on living organisms have often been tested using first occurrence dates, which may be uninformative an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f98aed4165a4c2d3c593d8b5818ae819
https://pure.au.dk/portal/da/publications/phenology-of-the-avian-spring-migratory-passage-in-europe-and-north-america(137780eb-45b6-4d1b-a318-e217dbca8c00).html
https://pure.au.dk/portal/da/publications/phenology-of-the-avian-spring-migratory-passage-in-europe-and-north-america(137780eb-45b6-4d1b-a318-e217dbca8c00).html
Publikováno v:
Journal of Experimental and Theoretical Physics. 123:832-837
The Ge/Ge x Si1–x /Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge x Si1–x buffer layer is 7–35 nm. It is show
Publikováno v:
Philosophical Magazine Letters. 96:361-366
High-resolution electron microscopy (HREM) at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge0.5Si0.5/Si(0 0 1) heterostructures. Our results provide a direct explanation that plastic relaxat