Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Leonid Makarenko"'
Publikováno v:
Materials, Vol 15, Iss 5, p 1861 (2022)
Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC)
Externí odkaz:
https://doaj.org/article/26c707cd9ead4e6ca9d30d6f1f9b47b0
Autor:
Tomas Ceponis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Eugenijus Gaubas
Publikováno v:
Materials, Vol 13, Iss 24, p 5684 (2020)
In this work, electrically active defects of pristine and 5.5 MeV electron irradiated p-type silicon–germanium (Si1−xGex)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-D
Externí odkaz:
https://doaj.org/article/6a73fcfbd69f4a9fb8341b5a00735426
Autor:
Tomas Ceponis, Laimonas Deveikis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Vytautas Rumbauskas, Eugenijus Gaubas
Publikováno v:
Sensors, Vol 20, Iss 23, p 6884 (2020)
The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectros
Externí odkaz:
https://doaj.org/article/7760ca8e1c5a42babdb8f2b1aaa62cc4
Autor:
E. A. Levchuk, Leonid Makarenko
Publikováno v:
Semiconductors. 54:1904-1906
The value of exchange energy for near-surface double-donor and double-quantum dot structures under the effect of external electric field has been calculated using unrestricted Hartree–Fock method. The dependences of exchange energy on geometric par
Autor:
V. Rumbauskas, Stanislau Lastovskii, L. Deveikis, Kornelijus Pukas, Leonid Makarenko, J. Pavlov, Tomas Ceponis, Eugenijus Gaubas
Publikováno v:
Sensors, Basel : MDPI, 2020, vol. 20, iss. 23, art. no. 6884, p. [1-12]
Sensors
Volume 20
Issue 23
Sensors, Vol 20, Iss 6884, p 6884 (2020)
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 23
Sensors, Vol 20, Iss 6884, p 6884 (2020)
Sensors (Basel, Switzerland)
The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f46f70768ce4e2c36a7a2d11cf3c11f
https://repository.vu.lt/VU:ELABAPDB91870421&prefLang=en_US
https://repository.vu.lt/VU:ELABAPDB91870421&prefLang=en_US
Autor:
Leonid Makarenko, Eugenijus Gaubas, Stanislau Lastovskii, Tomas Ceponis, J. Pavlov, Kornelijus Pukas
Publikováno v:
Materials, Basel : MDPI, 2020, vol. 13, iss. 24, art. no. 5684, p. [1-10]
Materials
Volume 13
Issue 24
Materials, Vol 13, Iss 5684, p 5684 (2020)
Materials
Volume 13
Issue 24
Materials, Vol 13, Iss 5684, p 5684 (2020)
In this work, electrically active defects of pristine and 5.5 MeV electron irradiated p-type silicon&ndash
germanium (Si1&minus
xGex)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and
germanium (Si1&minus
xGex)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad562afe91dd4535412cf4bbec99e194
https://repository.vu.lt/VU:ELABAPDB81870575&prefLang=en_US
https://repository.vu.lt/VU:ELABAPDB81870575&prefLang=en_US
Autor:
H. S. Yakushevich, Michael Moll, L.I. Murin, Leonid Makarenko, S. B. Lastovskii, Je. A. Pavlov, Eugenijus Gaubas
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 54:220-228
With the use of deep level transient spectroscopy (DLTS) the effect of injection of minority charge carriers (electrons) on an annealing rate of self di-interstitial – oxygen (I2O) complex in silicon has been studied. The complex has been formed by
Autor:
A. E. Vasil’ev, A. M. Strel’chuk, K. S. Davidovskaya, Leonid Makarenko, Vitali V. Kozlovski, A. A. Lebedev
Publikováno v:
Semiconductors. 51:299-304
The electrical characteristics of epitaxial layers of n-4H-SiC (CVD) irradiated with 0.9 and 3.5MeV electrons are studied. It is shown that the donor removal rate becomes nearly four times higher as the energy of impinging electrons increases by a fa
Autor:
Yana Gurimskaya, Isidre Mateu Suau, Michael Moll, Eckhart Fretwurst, Leonid Makarenko, Ioana Pintilie, Joern Schwandt
Publikováno v:
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Autor:
Leonid Makarenko, E. A. Levchuk
Publikováno v:
APPLICATION OF MATHEMATICS IN TECHNICAL AND NATURAL SCIENCES: 11th International Conference for Promoting the Application of Mathematics in Technical and Natural Sciences - AMiTaNS’19.