Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Leonid М. Portsel"'
Autor:
Yu. A. Astrov, C. R. Pidgeon, Zaiping Zeng, Andrew J. Fisher, V. B. Shuman, Leonid М. Portsel, Аnatoly N. Lodygin, Heinz-Wilhelm Hübers, S.G. Pavlov, B. N. Murdin, Konstantin Litvinenko, Nikolai V. Abrosimov, Juerong Li, Steven Clowes, Yann-Michel Niquet, Nguyen H. Le, Hans Engelkamp
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (8), ⟨10.1103/PhysRevB.98.085423⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (8), ⟨10.1103/PhysRevB.98.085423⟩
Physical Review B, 98, 1-8
Physical Review B, 98, 8, pp. 1-8
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (8), ⟨10.1103/PhysRevB.98.085423⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (8), ⟨10.1103/PhysRevB.98.085423⟩
Physical Review B, 98, 1-8
Physical Review B, 98, 8, pp. 1-8
We have performed high field magnetoabsorption spectroscopy on silicon doped with a variety of single and double donor species. The magnetic field provides access to an experimental magnetic length, and the quadratic Zeeman effect, in particular, may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1b35ac1860a2984147277c683bc5604
https://hal.archives-ouvertes.fr/hal-02141915
https://hal.archives-ouvertes.fr/hal-02141915
Autor:
Roman Kh. Zhukavin, Andreas Pohl, V.N. Shastin, Nikolay V. Abrosimov, Аnatoly N. Lodygin, V. B. Shuman, Klaus Irmscher, Sergey Pavlov, Yuri A. Astrov, Heinz-Wilhelm Hübers, Leonid М. Portsel
Publikováno v:
physica status solidi (b). 256:1800514
Autor:
Yuri A. Astrov, Leonid М. Portsel, Аnatoly N. Lodygin, Sergey Pavlov, Heinz-Wilhelm Hübers, V. B. Shuman, N. V. Abrosimov, V.N. Shastin
Publikováno v:
physica status solidi (a). 214:1700192
Doping of silicon with magnesiumis investigated by a sandwich diffusion technique. Temperature dependence of the diffusion coefficient in the dislocation-free silicon in the range of 1000–1200 8C is determined. It obeys the Arrhenius behavior over
Publikováno v:
Infrared Physics & Technology. 36:809-817
In this paper we study the applicability of a semiconductor gas discharge (SGD-) structure with a cryogenic discharge in neon for measuring spatially extended temperature distributions of heated bodies. The IR radiation from a heated body excites the