W-band Metamorphic Low Noise and Power Amplifiers

Autor: Whelan, C. S., Herrick, K., Leoni, R. E., Marsh, P. F., Zhang, Y., Lardizabal, S., Hoke, W. E., Lichwala, S., Kotce, J., Balas, P., Kazior, T. E., Laighton, D.

Publikováno v: Whelan, C. S. ; Herrick, K. ; Leoni, R. E. ; Marsh, P. F. ; Zhang, Y. ; Lardizabal, S. ; Hoke, W. E. ; Lichwala, S. ; Kotce, J. ; Balas, P. ; Kazior, T. E. ; Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Low noise metamorphic amplifiers fabricated on our 4” manufacturing line demonstrate 3.5 dB oise figure at 92 GHz. By tailoring the device’s material, geometry and processing, our device designers have achieved 320 mW/mm, 10 dB of small signal ga

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High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications.

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