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pro vyhledávání: '"Leonardo Yojo"'
Autor:
Pedro Henrique Duarte, Ricardo Cardoso Rangel, Daniel Augusto Ramos, Leonardo Yojo, Katia Sasaki, Paula Agopian, Joao Martino
Publikováno v:
ECS Transactions. 111:279-284
This paper presents, for the first time, the BESOI MOSFET working as Ion Sensitive Field Effect Transistor (ISFET): the BESOI ISFET. Experimental measurements were performed with standard pH solution replacing the gate electrode. The threshold voltag